Hostname: page-component-7c8c6479df-8mjnm Total loading time: 0 Render date: 2024-03-19T03:40:38.766Z Has data issue: false hasContentIssue false

Role of SrTiO3 Seed Layer on Low-temperature Crystallization of Pb(Zr, Ti)O3 Films Prepared by Metalorganic Chemical Vapor Deposition

Published online by Cambridge University Press:  01 February 2011

Ji-Won Moon
Affiliation:
jwmoon@sim.ceram.titech.ac.jp, Tokyo Institute of Technology, Department of Metallurgy and Ceramics Science, 2-12-1 O-Okayama, Meguro-ku, Tokyo, 152-8552, Japan, +81-3-5734-2518, +81-3-5734-3369
Naoki Wakiya
Affiliation:
tnwakiy@ipc.shizuoka.ac.jp, Shizuoka University, Department of Materials and Chemical Engineering, 3-5-1 Johoku, Hamamatsu, Shizuoka, 432-8561, Japan
Takanori Kiguchi
Affiliation:
tkiguchi@imr.tohoku.ac.jp, Tohoku University, Institute for Materials Research, 2-1-1 Katahira, Aoba-ku, Sendai, 980-8577, Japan
Tomohiko Yoshioka
Affiliation:
tyoshioka@ceram.titech.ac.jp, Tokyo Institute of Technology, Department of Metallurgy and Ceramics Science, 2-12-1 O-Okayama, Meguro-ku, Tokyo, 152-8552, Japan
Tanaka Junzo
Affiliation:
Junzo.Tanaka@ceram.titech.ac.jp, Tokyo Institute of Technology, Department of Metallurgy and Ceramics Science, 2-12-1 O-Okayama, Meguro-ku, Tokyo, 152-8552, Japan
Kazuo Shinozaki
Affiliation:
ksino@ceram.titech.ac.jp, Tokyo Institute of Technology, Department of Metallurgy and Ceramics Science, 2-12-1 O-Okyama, Meguro-ku, Tokyo, 152-8552, Japan
Get access

Abstract

Role of SrTiO3 seed layer on low-temperature crystallization of Pb(Zr, Ti)O3 (PZT) film was investigated. The SrTiO3 seeds were prepared by pulsed laser deposition (PLD) with the temperature range of 400-600 °C and PZT films were prepared by thermal MOCVD. The pyrochlore free PZT films can be successfully crystallized at around 340 °C on SrTiO3 seed layers by thermal MOCVD. It was found that the role of SrTiO3 seed layer is not only pyrochlore suppression but also perovskite promotion. It is also considered that crystallinity, surface coverage and seed layer thickness are important parameters for low-temperature crystallization and electrical properties of PZT films.

Type
Research Article
Copyright
Copyright © Materials Research Society 2008

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Kim, K., Integrated Ferroelectrics 2001, 36, 21.Google Scholar
2. Piekarski, B., Dubey, M., Zakar, E., Polcawich, R., DeVoe, D., and Wickenden, D., Integrated Ferroelectrics 2002, 42, 25.Google Scholar
3. Aratani, M., Nagashima, K., H., and Funakubo, , Jpn. J. Appl. Phys. 2001 40, 4126.Google Scholar
4. Huang, Z., Zhang, Q., and Whatmore, R. W., J. Appl. Phys. 1999, 85, 7355.Google Scholar
5. Kwok, C. K. and Desu, S. B., J. Mater. Res. 1993, 8, 339.Google Scholar
6. Moon, J.-W., Tazawa, S., Shinozaki, K., Wakiya, N., and Mizutani, N., Appl. Phys. Lett. 2006, 89, 202907.Google Scholar
7. Moon, J. W., Tazawa, S., Wakiya, N., Kiguchi, T., Ishida, Y., Mizutani, N., and Shinozaki, K., Solid State Phenomena 2007, 124–126, 153.Google Scholar
8. Tagantsev, A. K., and Gerra, G., J. Appl. Phys. 2006, 100, 051607.Google Scholar