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A Robust LPCVD Nitride Integrated Process for High Density Non-Volatile Eprom Memories

  • R. B. Sethi (a1), R. P. Ciari (a1), L. Anderson (a1), U. S. Kim (a1) and A. Bergemont (a1)...

Abstract

A robust 6" hotwall flatzone nitride system is developed for scaled ONO interpoly. dielectric application in a high density EPROM memory cell. This system is designed to operate at low temperature (660° C) and gas ratio (4:1 NH3: DCS) with integrated silicon carbide components. The obtained key features are low defects (0.25 #/cm2 particles), smooth topography (measured by atomic force microscopy) and superior electrical interface as measured by electrical and optical methods.

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References

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1. Yoshikawa, K. et al. , presented at the 1991 VLSI Technology Symposium.
2. Soennecken, A., Hilleringmann, U., Goser, K., Microelectronic Eng. 15(1991)
3. Kim, U. S. and Sethi, R. B., Extended Abstract of Electrochemical Society Meeting, Phoenix, AZ, Oct. 1991, Abstract No. 216.
4. Chesters, S.. Chang, H. & Kasper, G., Solid State Technology, January,1991
5. Murali, V., Wu, A.T., Chatterjee, A., and Fraser, D. B., presented at the 1990 Symposium on VLSI Technology.
6. Pan, C., Wu, K.J., Frieberger, P., Chatterjee, A., and Sery, G., IEEE Trans. on Electron Devices, Vol. 37, No. 6, 1990

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