We have made a-Si photoreceptors at low pressure to prevent the formation of SimHn powders and by separating the growing surface from the high density plasma. A new plasma CVD method using a hollow-cathode discharge, where the discharge electrode is the cathode, is described. There is a hollow region in the discharge electrode. Hollow-cathode discharge enables a high density plasma to form at low pressure. The gas is decomposed in the hollow cathode preventing plasma damage to the film. This method allows us to achieve a high deposition rate (10 µm/h) and good quality films for photoreceptors.