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Reversible Degradation of Photoluminescence in Si/SiGe Three Dimensional Nanostructures

  • Nikhil Modi (a1), Leonid Tsybeskov (a1), David J. Lockwood (a2), Xiao Z. Wu (a2) and Jean Marc Baribeau (a2)...

Abstract

We report the degradation of low temperature photoluminescence (PL) from Si/SiGe three-dimensional cluster morphology nanostructures under continuous photoexcitation. The PL intensity initially decreases slowly for about 15 minutes, and then decreases rapidly, until only ∼ 10% of the original PL intensity remains. A complete recovery of the PL requires restoring the sample temperature to ∼ 300K. We propose that a slow accumulation of charge in SiGe clusters enhances the rate of Auger recombination and results in the observed PL degradation.

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