Hostname: page-component-7bb8b95d7b-lvwk9 Total loading time: 0 Render date: 2024-09-27T23:45:08.497Z Has data issue: false hasContentIssue false
  • English
  • Français

Resonant Tunnelling Behaviour in Multilayered Cold Cathodes Made of Nanoseeded Diamond and Nanocluster Carbon

Published online by Cambridge University Press:  21 March 2011

B.S. Satyanarayana  and
A. Hiraki
B.S. Satyanarayana
Affiliation:
KUT Academic & Industrial Collaboration Centre, Kochi University of Technology, 185, Miyanokuchi, Tosayamada, Kochi, 782-8502, Japan.
A. Hiraki
Affiliation:
KUT Academic & Industrial Collaboration Centre, Kochi University of Technology, 185, Miyanokuchi, Tosayamada, Kochi, 782-8502, Japan.
Get access

Abstract

Multilayered cold cathodes made of spin coated nanocrystalline diamond and cathodic arc process grown nanocluster carbon films, were studied. The nanocrystalline diamond was first coated on to the substrate. The nanocluster carbon films were then deposited on the seeded nanocrystalline diamond coated substrates using the cathodic arc process at room temperature. Theresultant hetrostructured microcathodes were observed to exhibit electron emission currents of 1μA/cm2 at fields as low as 1.2 V/μm. Further some of the samples seem to exhibit I-V characteristics witha negative differential resistance region at room temperature conditions. This negative differential resistance or the resonant tunneling behaviour was observed to be dependent on the nanoseeded diamond size and concentration for a given nanocluster carbon film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 676: Symposium Y – Synthesis, Functional Properties and Applications of Nanostructures , 2001 , Y8.42
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Zhu, W., Kochanski, G P & Jin, S, Science, 282, 1471, (1998).Google Scholar
2. Ding, M. Q., Gruen, D. M., Krauss, A. R., Auciello, O., Corrigan, T. D. and Chang, R. P. H., J Vac Sci Technol B 17, 705 (1999).Google Scholar
3. Satyanarayana, B. S., Peng, X. L., Adamopoulos, G., Robertson, J., Milne, W. I., & Clyne, T. W., MRS Symp. Proc. Vol. 621, (2000).Google Scholar
4. de Heer, W. A., Chatelain, A., and Ugrate, D., Science 270, 1179 (1995).Google Scholar
5. Chen, Y., Patel, S., Ye, Y., Shaw, D. T. & Guo, L., App. Phys. Lett, 73, 2119 (1998).Google Scholar
6. Coll, B. F., Jaskie, J. E., Markham, J. L., Menu, E. P., Talin, A. A., von Allmen, P., MRS. Sym Proc. Vol 498, 185 (1998).Google Scholar
7. Satyanarayana, B S, Robertson, J, Milne, W I, J. App. Phys. 87, 3126, (2000)Google Scholar
8. Obraztsov, O. N., Pavlovsky, I. Yu. and Volkov, A. P., J. Vac. Sci. Technol. B 17, 674, (1999).Google Scholar
9. Ferrari, A. C., Satyanarayana, B. S., Milani, P., Barborini, E., Piseri, P., Robertson, J. and Milne, W. I.. Europhys. Lett, 46, 245 (1999)Google Scholar
10. Satyanarayana, B. S., Nishimura, K., Hiraki, A. & Milne, W. I., MRS Syp. Proc. Vol. 621, (2000).Google Scholar
11. Satyanarayana, B S, Hart, A, Milne, W I & Robertson, J, App Phys Lett 71, 1430 (1997).Google Scholar
12. Karabutov, A. V., Forlov, V. D. & Konov, V. I., Diamond & Rel. Mater. 10, 840, (2001).Google Scholar