Hostname: page-component-84b7d79bbc-5lx2p Total loading time: 0 Render date: 2024-07-30T17:57:10.840Z Has data issue: false hasContentIssue false
  • English
  • Français

Resonant Photoluminescence Excitation in GaAs Grown Directly on Si

Published online by Cambridge University Press:  28 February 2011

S. Zemon ,
C. Jagannath ,
S. K. Shastry ,
W. J. Miniscalco  and
G. Lambert
S. Zemon
Affiliation:
GTE Laboratories, 40 Sylvan Road, Waltham, MA 02254
C. Jagannath
Affiliation:
GTE Laboratories, 40 Sylvan Road, Waltham, MA 02254
S. K. Shastry
Affiliation:
GTE Laboratories, 40 Sylvan Road, Waltham, MA 02254
W. J. Miniscalco
Affiliation:
GTE Laboratories, 40 Sylvan Road, Waltham, MA 02254
G. Lambert
Affiliation:
GTE Laboratories, 40 Sylvan Road, Waltham, MA 02254
Get access

Abstract

We describe new results observed during resonant excitation in the excitonic region of GaAs grown directly on Si by organometallic vapor phase epitaxy. Two resolved features were found in the light hole photoluminescence (PL) region, one identified with a free exciton process and the other with donor-related transitions. Features which track the laser excitation line were observed and identified with a process in which a donor is excited from the n=l ground state to an n=2 excited state. The PL excitation spectra associated with these features have spectral widths as narrow as 1.5 meV. PL spectral widths of ~3 meV have been attained for the heavy hole exciton band, representing the narrowest value obtained for OMVPE material and an improvement of about 30% over our best previous results.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 116 , 1988 , 239
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 See, for example,“Heteroepitaxy on Silicon II,” in Proceedings of the Materials Research Society, edited by Fan, J. C. C., Philips, J. M. and Tsaur, B-Y (Materials Research Society, Pittsburgh, PA, 1987), Vol. 91.Google Scholar
2 Fischer, R., Masselink, W., Klemn, J., Henderson, T., McGlinn, T., Klein, M., Morkoc, H., Mazur, J., and Washburn, J., J. Appl. Phys. 58, 374 (1985); W. Duncan, J. Lee, R. Matyl, and H-Y Liu, J. Appl. Phys. 59, 2161 (1986).Google Scholar
3 Zemon, S., Shastry, S. K., Norris, P., Jagannath, C., and Lambert, G., Solid State Commun. 58, 8457 (1986).CrossRefGoogle Scholar
4 Zemon, S., Jagannath, C., Koteles, E., Shastry, S. K., Norris, P., Lambert, G., Choudhury, A.N.M.M., and C., A, Armiento, in Gallium Arsenide and Related Compound 1986, edited by Lindley, W. T. (Institute of Physics, Bristol, 1987), Inst. Phys. Conf. Ser. No. 83, pp. 141-146.Google Scholar
5 Jagannath, C., Zemon, S., P, Norris, and Elman, B. S., Appl. Phys. Lett. 51, 1268 (1987).CrossRefGoogle Scholar
6 Chand, N., People, R., Baiocchi, F. A., Wecht, K. W., and Cho, A. Y., Appl. Phys. Lett. 49, 815 (1986); R. M. Lum, J. K. Klingert, B. A. Davidson, and M. G. Lamont, Appl. Phys. Lett. 51!, 36 (1987).CrossRefGoogle Scholar
7 Enatsu, M., Shimizu, M., Mizuki, T., Sugawara, K., and Sakurai, T., Jpn. J. Appl. Phys. 26, L1468 (1987); B. A. Wilson, C. Bonner, T. D. Harris, M. ILamont, R. C. Miller, S. Sputz, S. Vernon, V. Haven, R. Lum, and J. Klingert, “Heteroepitaxy on Silicon II,” in Proceedings of the Materials Research Society, edited by J. C. C. Fan, J. M. Philips, and B-Y Tsaur (Materials Research Society, Pittsburgh, PA 1987), Vol. 91, p. 255.Google Scholar
8 Jacobi, B. G., Zemon, S., Norris, P., Jagannath, C., and Sheldon, P., Appl. Phys. Lett. 51, 2236 (1987).Google Scholar
9 Zemon, S., Jagannath, C., Shastry, S. K., and Lambert, G., Solid State Commun. 65, 553 (1988).CrossRefGoogle Scholar
10 Stolz, W., Guimaraes, F. E. G., and Ploog, K., J. Appl, Phys. 63, 492 (1988).CrossRefGoogle Scholar
11 See, for example, Sell, D. D., Stokowski, S. E., Dingle, R., and DiLorenzo, J. V., Phys. Rev. B 7, 4568 (1973) and R. Ulbrich and B. Moreth, Solid State Commun. 14, 331 (1974).Google Scholar
12 This peak absorption wavelength is determined from PLE spectra where the spectrometer wavelengths are set in the deep level region.Google Scholar
13 Rossi, J. M., Wolfe, C. M., Stillman, G. E., and Dimmock, J. O., Solid State Commun. 8, 2021 (1970).Google Scholar
14 Ulbrich, R. G., Hieu, N. V., and Weisbuch, C., Phys. Rev. Lett. 46, 53 (1981).CrossRefGoogle Scholar