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The Resolution of Photoelectrochemically Etched Features

  • J. Cheng (a1) and P. A. Kohl (a1)

Abstract

The profiles of features etched photoelectrochemically in n-InP are studied to determine the factors which govern their distortions and to determine the factor limiting spatial resolution for etch depths in the 100–200−μm range. The optimal conditions for etching straight grooves using laser light are determined. The application to front-to-back mask registration will be discussed.

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References

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1. Ostermayer, F. W. Jr., Kohl, P. A., Burton, R. H.; Appl. Phys. Letters 43, 642 (1983).
2. Kohl, P. A., D'Asaro, L. A., Wolowodiuk, C., Ostermayer, F. W. Jr., to be published in Electron Device Letters, Jan. 1984.
3. Bowers, J. E., Coldren, L. A., Miller, B. I., Kohl, P. A., presented at the Electronic Materials Conference, Univ. of Vermont, Burlington, Vt., June 24, 1983.

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