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Resistless Patterning of Hydrogenated Amorphous Silicon Films

Published online by Cambridge University Press:  15 February 2011

Russell E. Hollingsworth ,
Mary K. Hemdon ,
Reuben T. Collins ,
J.D. Benson ,
J.H. Dinan  and
J.N. Johnson
Russell E. Hollingsworth
Affiliation:
Materials Research Group, Inc., 12441 W. 49th Ave., Suite #2, Wheat Ridge, CO 80033
Mary K. Hemdon
Affiliation:
Colorado School of Mines, Physics Department, Golden, CO
Reuben T. Collins
Affiliation:
Colorado School of Mines, Physics Department, Golden, CO
J.D. Benson
Affiliation:
Night Vision and Electronic Sensors Directorate, Ft. Belvoir, VA
J.H. Dinan
Affiliation:
Night Vision and Electronic Sensors Directorate, Ft. Belvoir, VA
J.N. Johnson
Affiliation:
E-OIR Measurements, Spotsylvania, VA
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Abstract

Practical methods for directly patterning hydrogenated amorphous silicon (a-Si:H) films have been developed. Direct patterning involves selectively oxidizing the hydrogen passivated a-Si:H surface or laser crystallization of the bulk. The oxide or polycrystalline layer formed in this way then becomes a mask for subsequent hydrogen plasma etching. Methods for selective oxidation of the a-Si:H surface have been extensively studied. Examination of the pattern generation threshold dose for excitation wavelengths from 248 to 633nm provides indirect evidence for electron-hole recombination breaking of the silicon-hydrogen bond. An additional hydrogen removal mechanism was observed whereby simple proximity of a tapered fiber optic probe less than 30nm from the sample surface resulted in pattern generation. Patterns were generated in both intrinsic and doped a-Si:H films by several means, including contact printing with a mask aligner, in situ projection lithography with an excimer laser, and direct writing with a near-field scanning optical microscope (NSOM). Direct patterning of a-Si:H films has a wide range of potential applications. We have demonstrated a-Si:H as an in situ photoresist material for patterning HgCdTe infrared detector arrays with all process steps done in vacuum. We have also demonstrated 100nm line widths using NSOM writing with a photolithography goal. Direct patterning of a-Si:H could simplify the manufacturing of thin film transistors, or other devices that require patterned silicon films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 557: Symposium A – Amorphous and Heterogeneous Silicon Thin Films—Fundamentals to Devices—1999 , 1999 , 821
Copyright
Copyright © Materials Research Society 1999

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