Skip to main content Accessibility help
×
Home

Resistive Switching Memory Based on Ferroelectric Polarization Reversal at Schottky-like BiFeO3 Interfaces

  • Atsushi Tsurumaki-Fukuchi (a1), Hiroyuki Yamada (a1) and Akihito Sawa (a1)

Abstract

We have fabricated a ferroelectric resistive switching device of Pt/Bi1-δFeO3 (BFO)/SrRuO3 (SRO) in which the conductivity of BFO layer was controlled by changing the Bi-deficiency concentration. The devices showed a bipolar-type resistive switching effect, i.e., zero-crossing hysteretic current–voltage (IV) characteristics. In addition, the IV characteristics in both high and low resistance states are nonlinear, which can avoid a read-error problem in a passive crossbar memory array. Resistive switching characteristics measured in pulse-voltage mode revealed that the resistance values in low resistance states vary with the amplitude and duration time of the pulsed-voltage stresses, indicating possibility of multilevel switching. On the basis of the experimental results, we discuss the potential of the Pt/BFO/SRO device for application in a large-capacity nonvolatile memory.

Copyright

References

Hide All
1. Sawa, A., Mater. Today 11, 28 (2008).
2. Waser, R., Dittmann, R., Staikov, G. and Szot, K., Adv. Mater. 21, 2632 (2009).
3. Blom, P. W. M., Wolf, R. M., Cillessen, J. F. M. and Krijin, M. P. C. M., Phys. Rev. Lett. 73, 2107 (1994).
4. Choi, T., Lee, S., Choi, Y. J., Kiryukhin, V. and Cheong, S.-W., Science 324, 63 (2009).
5. Garcia, V., Fusil, S., Bouzehouane, K., Enouz-Vedrenne, S., Mathur, N. D., Barthélémy, A. and Bibes, M., Nature 460, 81 (2009).
6. Tsurumaki, A., Yamada, H. and Sawa, A., Adv. Funct. Mater. 22, 1040 (2012).
7. Lee, D., Yang, S. M., Kim, T. H., Jeon, B. C., Kim, Y. S., Yoon, J.-G., Lee, H. N., Beak, S. H., Eom, C. B. and Noh, T. W., Adv. Mater. 24, 402 (2012).
8. Pantel, D., Chu, Y.-H., Martin, L. W., Ramesh, R., Hesse, D. and Alexe, M., J. Appl. Phys. 107, 084111 (2010).
9. Kim, T. H., Baek, S. H., Yang, S. M., Jang, S. Y., Ortiz, D., Song, T. K., Chung, J.-S., Eom, C. B., Noh, T. W. and Yoon, J.-G., Appl. Phys. Lett. 95, 262902 (2009).
10. Lee, M.-J., Seo, S., Kim, D.-C., Ahn, S.-E., Seo, D. H., Yoo, I.-K., Baek, I.-G., Kim, D.-S, Byun, I.-S., Kim, S.-H., Hwang, I.-R., Kim, J.-S., Jeon, S.-H. and Park, B. H., Adv. Mater. 19, 73 (2007).
11. Shin, J., Kim, I., Biju, K. P., Jo, M., Park, J., Lee, J., Jung, S., Lee, W., Kim, S., Park, S. and Hwang, H., J. Appl. Phys. 109, 033712 (2011).

Keywords

Resistive Switching Memory Based on Ferroelectric Polarization Reversal at Schottky-like BiFeO3 Interfaces

  • Atsushi Tsurumaki-Fukuchi (a1), Hiroyuki Yamada (a1) and Akihito Sawa (a1)

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed