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Residual Stress Effects on the Fracture of Tantalum Nitride Films

Published online by Cambridge University Press:  10 February 2011

N. R. Moody ,
R. Q. Hwang ,
J. E. Angelo ,
S. Venkataraman  and
W. W. Gerberich
N. R. Moody
Affiliation:
Sandia National Laboratories, Livermore, CA 94551–0969
R. Q. Hwang
Affiliation:
Sandia National Laboratories, Livermore, CA 94551–0969
J. E. Angelo
Affiliation:
Seagate Technologies, Bloomington, MN 55420
S. Venkataraman
Affiliation:
Applied Materials, Santa Clara, CA 95054
W. W. Gerberich
Affiliation:
University of Minnesota, Minneapolis, MN 55455.
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Abstract

In this study, continuous microscratch testing was used to determine the effects of compressive residual stresses on the fracture of thin tantalum nitride films. The films were sputter deposited at room temperature onto single crystal sapphire substrates to a thickness of 600 nm. Some films were left in the as-deposited condition while the remaining films were vacuum annealed at 300°C. The only discernible change in structure was a surface rearrangement of atoms into parallel arrays of striations on the vacuum annealed samples revealing a high compressive residual stress in the films. These stresses had a strong effect on fracture as shown by the as-deposited films which buckled readily during scratch tests forming uniform-width and circular blisters while the vacuum annealed films exhibited a much lower susceptibility to fracture. Application of mechanics-based models for film buckling defined the levels of compressive residual stress and their effect on interfacial fracture.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 458: Symposium W – Interfacial Engineering for Optimized Properties , 1996 , 453
Copyright
Copyright © Materials Research Society 1997

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References

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