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Removal of Plasma-Etch-Induced Polymers from Submicron Via Holes by Excimer Laser Ablation

Published online by Cambridge University Press:  15 February 2011

Y. F. Lu ,
Y. P. Lee  and
M. S. Zhou
Y. F. Lu
Affiliation:
Department of Electrical Engineering and Data Storage Institute, National University of Singapore, 10 Kent Ridge Crescent, Singapore 119260.
Y. P. Lee
Affiliation:
Department of Electrical Engineering and Data Storage Institute, National University of Singapore, 10 Kent Ridge Crescent, Singapore 119260.
M. S. Zhou
Affiliation:
Chartered Semiconductor Manufacturing Ltd., 60 Woodlands Ind. Park D, Street 2, Singapore 738406.
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Abstract

A relatively new approach in removing the sidewall and bottom polymers resulting from reactive ion etching of via holes, using a non-contact dry excimer laser cleaning technique has been investigated. Pulsed excimer laser ablation at 248 nm has been found to be capable of removing the via-etch-induced polymers at fluences limited by the damage threshold of the underlying Al-Cu metal film with TiN anti-reflective coating of 250-280 mJ cm-2. A fluence window of 150-200 mJ cm-2 for efficient laser cleaning is also determined from the ablation rate data using the relation in the limit of Beer's law absorption. Experimental results have also shown that the ablation rate when irradiating at an angle is not only comparable to that at vertical incidence, but even register higher values for most of the ablation rate data obtained. An optimum incident angle for laser cleaning of 45° can be determined from the results.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 526: Symposium Y – Advances in Laser Ablation of Materials , 1998 , 415
Copyright
Copyright © Materials Research Society 1998

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