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Remote Plasma Enhanced-Metal Organic Chemical Vapor Deposition of Zirconium Oxide/Silicon Oxide Alloy, (ZrO2)1-(SiO2)1−x (x:≤0.5), Thin Films for Advanced High-K Gate Dielectrics

Published online by Cambridge University Press:  10 February 2011

D. Wolfe ,
K. Flock ,
R. Therrien ,
R. Johnson ,
B. Rayner ,
L. Günther ,
N. Brown ,
B. Claflin  and
G. Lucovsky
D. Wolfe
Affiliation:
Departments of Materials Science and Engineering, Physics, and Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-8202, USA
K. Flock
Affiliation:
Departments of Materials Science and Engineering, Physics, and Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-8202, USA
R. Therrien
Affiliation:
Departments of Materials Science and Engineering, Physics, and Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-8202, USA
R. Johnson
Affiliation:
Departments of Materials Science and Engineering, Physics, and Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-8202, USA
B. Rayner
Affiliation:
Departments of Materials Science and Engineering, Physics, and Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-8202, USA
L. Günther
Affiliation:
Departments of Materials Science and Engineering, Physics, and Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-8202, USA
N. Brown
Affiliation:
Departments of Materials Science and Engineering, Physics, and Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-8202, USA
B. Claflin
Affiliation:
Departments of Materials Science and Engineering, Physics, and Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-8202, USA
G. Lucovsky
Affiliation:
Departments of Materials Science and Engineering, Physics, and Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-8202, USA
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Abstract

A remote plasma enhanced-metal organic chemical vapor deposition (RPE-MOCVD) process was developed for the preparation of non-crystalline (ZrO2)x-(SiO2)1−x (x ≤ 0.5) alloys, targeting the compound composition ZrSiO4with k ∼ 12.5. Shifts in Si LVV and Zr LMM AES energies with respect to elemental values showed that the deposited film was a fully-oxidized zirconium/silicon alloy. FTIR results were consistent with AES, and a Zr-O-Si bonding mode was identified in the spectra. The films were amorphous before and after RTA at 900°C for 30 sec, as monitored via RHEED. Optical absorption measurements indicated the onset of band-to-band transitions at an energy of approximately 6 eV. Finally, C-V testing showed that the films were insulating.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 567: Symposium R – Ultrathin SiO2 and Higg-K Materials for ULSI Gate Dielectrics , 1999 , 343
Copyright
Copyright © Materials Research Society 1999

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References

REFERENCES

[1] Blumenthal, W.B., The Chemical Behavior of Zirconium, (Van Nostrand, New York, 1958), 214.Google Scholar
[2] Bragg, L., Claringbull, G.F., and Taylor, W.H., Crystal Structures of Minerals, (Cornell Press, Ithaca, 1937), 185.Google Scholar
[3] Martin, R.M., Lucovsky, G., and Helliwell, K., Phys. Rev. B. 13, 1383 (1976).10.1103/PhysRevB.13.1383Google Scholar
[4] Hückel, W., Structural Chemistry of Inorganic Compounds, (Elsevier, Amsterdam, 1951).Google Scholar
[5] Coudurier, L., Hopkins, D.W., and Wilkomirsky, I., Fundamentals of Metallurgical Processes, 2nd ed., (Pergamon Press, Oxford, 1985).Google Scholar
[6] Hubbard, K.J. and Schlom, D.G., J. Mater. Res. 11, 2757 (1996).10.1557/JMR.1996.0350Google Scholar
[7] Lucovsky, G., Tsu, D.V., Rudder, R.A., and Markunas, R.J., in Thin film Processes II, edited by Vossen, J.L. and Kern, W. (Academic Press Inc., San Diego, 1991), pp. 565–619.10.1016/B978-0-08-052421-4.50016-2Google Scholar
[8] Handbook of Auger Electron Spectroscopy 3rd ed., edited by Hedberg, C.L. (Physical Electronics, Inc., Eden Prarie, MN, 1995).Google Scholar
[9] Tsu, D.V., Lucovsky, G., and Davidson, B.N., Phys. Rev. B 40, 1795 (1989).10.1103/PhysRevB.40.1795Google Scholar
[10] Tartaj, P., Serna, C.J., Moya, J.S., Requena, J., Ocana, M., DeAza, S., and Guitian, F., J. Mater. Sci. 31, 6089 (1996).10.1007/BF01152164Google Scholar
[11] Duffy, J.A., Bonding, Energy Levels and Bands in Inorganic Solids, (Wiley, New York, 1990).Google Scholar