Skip to main content Accessibility help
×
Home

Reliable, Reproducible and Efficient MOCVD of III-Nitrides in Production Scale Reactors

  • B. Wachtendorf (a1), R. Beccard (a1), D. Schmitz (a1), H. Jürgensen (a1), O. Schön (a2), M. Heuken (a2) and E. Woelk (a3)...

Abstract

In this paper we present a class of MOCVD reactors with loading capacities up to seven 2″ wafers, designed for the mass production of LED structures.

Our processes yield device quality GaN with excellent PL uniformities better than 1 nm across a 2″ wafer and thickness uniformities typically better than 2%.

We also present full 2″ wafer mapping data, High Resolution Photoluminescence Wafer Scanning and sheet resistivity mapping, revealing the excellent composition uniformity of the nitride compounds InGaN and AlGaN. As well we will show sheet resistivity uniformity for Si-doped GaN and Mg-doped GaN.

Copyright

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed