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Reliability Studies of Cu using Wafer Level Joule Heated Electromigration Test

Published online by Cambridge University Press:  10 February 2011

Kia Seng Low  and
Anthony O'Neill
Kia Seng Low
Affiliation:
Poetzlberger Hans, Infineon Technologies AG, Munich, GERMANY.
Anthony O'Neill
Affiliation:
University of Newcastle Upon Tyne, Electrical and Electronics Dept., UNITED KINGDOM.
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Abstract

In this paper, we describe some of the results that we have obtained using Wafer Level Joule Heated Electromigration Test and Current Ramp Test. The results indicate that the Cu we tested is more resistive to open failure due to current ramp than Al-1%Si-0.5%Cu. The value of the activation energy for electromigration of Cu using fixed current under wafer level joule heated electromigration test is 0.59 eV. The activation energy due to the effect of temperature gradient failure mechanism is 0.82 eV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 564: Symposium N – Advanced Interconnects and Contacts , 1999 , 365
Copyright
Copyright © Materials Research Society 1999

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References

[1] Edelstein, D.C., Proc. of SPIE: Multilevel Interconnect Technology II, Vol. 3508, Sept, 1998, 8–13.10.1117/12.324035Google Scholar
[2] Schulz, S.E., Baumann, J., Weidner, J., Hasse, W., Koerner, H. and Gessner, T., Advanced Metallization and Interconnect Systems for ULSI Applications in 1997, MRS, Pittsburgh, PA, 1997, 427–434.Google Scholar
[3] Schafft, H.A. and Suehle, J.S., Solid State Electronics, Vol. 35, No.3 1992, 403–410.10.1016/0038-1101(92)90244-7Google Scholar