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Reliability Issues of a Crack-Resistant Passivation Layer Process for Sub-Micron Non-Volatile Memory Technology

  • Mansour Moinpour (a1), John Chu (a1), Karen Lubic (a1) and Farhad Moghadam (a1)


Chemically vapor deposited phosphosilicate glass (PSG) has been used extensively for final passivation on EPROM and other Non Volatile Memory (NVM) technologies. The maximum amount of phosphorous that can be added to the passivation oxide (post metallization) is constrained by the stability of the as-deposited, undensified film. Atmosphericpressure chemically vapor deposited films of various dopant levels ranging from pure PSG to various boron and phosphorous wt%BPSG films were studied with respect to their passivation properties. The film performance with respect to passivation crack resistance, step coverage, and impacts on metal cracks/voids was evaluated. It was found that the crack resistance was by far more sensitive to boron concentration than that of phosphorous in the undensified film. The crack resistance is shown to be dependent on the as-deposited film densities, moisture levels and amount of shrinkage after a 400° C alloy/anneal. Other important parameters such as stress levels, UV transparency and sodium gettering capabilities were investigated. Reliability data on packaged-device level testing (both ceramic and plastic units) are also presented.



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1. Schlacter, M.M., Schlegal, E.S., Keen, R.S., Lathlean, R.A. and Schnable, G.L., IEEE Trans. Electron Devices ED–17, No. 12, pp. 10771084, 1969.
2. Paulson, W.M. and Kirk, R.W., Proc. Int. Reliab. Phys. Symp., Vol. 12, pp. 172179, 1974.
3. Kern, W. and Schnable, G.L., RCA Rev., Vol. 43, pp. 423437, 1982.
4. Wada, T., Sugimoto, M., and Ajiki, T., J. Electrochem. Soc., Vol. 136, No. 3, pp. 732735, 1989.
5. Kern, W. and Smeltzer, R., Solid State Technology, Vol. 28, No. 6, pp. 171179, 1985.
6. Sinha, A.K., Levinstein, H.J., and Smith, T.E., J. Appl. Phys., Vol. 49, No. 4, pp. 24232426, 1978.
7. McInerney, E.J. and Flinn, P.A., Proc. Int. Reliab. Phys. Symp., Vol. 20, pp. 264267, 1982.
8. Paulson, W.M. and Lorigan, R.P., Proc. Int. Reliab. Phys. Symp., Vol. 14, pp. 4247, 1976.
9. Shirley, C.G. and Maston, S.C., Internal Intel Technical Memo, 1990.
10. Cox, J.N., Shergill, G., Rose, M., and Chu, J.K., Proceedings of the 1990 VMIC, pp. 419421, June, 1990).
11. Cox, J.N., Ren, J.Z., Horn, J.M. Van, Kwok, K.W., ECS Extended Abstracts, Vol. 92–2, No. 149, pp. 250251, May 1992.
12. Pliskin, W.A., J. Vac. Sci. Technol., Vol. 14, pp. 10641068, 1977.
13. Arai, E. and Terunuma, Y., J. Electrochem. Soc., Vol. 121, pp. 676681, 1974.
14. Chen, M., Internal Intel Technical Memo, March, 1990.
15. Myers, J., Internal Intel Technical Memo, February, 1990.


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