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Relaxed Si1−xGex Layers on Simox Avoiding a Lattice Mismatched Heterointerface

  • B. Holländer (a1), S. Mantl (a1), R. Butz (a1), W. Michelsen (a1) and Ch. Dieker (a1)...

Abstract

For the first time, Si1 xGex layers on amorphous SiO 2 were produced by modification of the Si surface layer of a SIMOX wafer. We used two alternative methods. An additional Si1.. Gey layer was deposited epitaxially on a SIMOX wafer followed by rapid thermal annealing. Diffusional intermixing of the layers produced a homogeneous Si1 xGex layer on SiO 2. In a second attempt, Ge was implanted into the Si surface layer and thermally treated. In both cases epitaxial Si1 xGex layers on SiO2 with minimum yield values around 9% were obtained. Rutherford backscattering and cross sectional transmission electron microscopy were used to characterize the new structures.

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Relaxed Si1−xGex Layers on Simox Avoiding a Lattice Mismatched Heterointerface

  • B. Holländer (a1), S. Mantl (a1), R. Butz (a1), W. Michelsen (a1) and Ch. Dieker (a1)...

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