Hostname: page-component-77c89778f8-gq7q9 Total loading time: 0 Render date: 2024-07-19T04:26:13.403Z Has data issue: false hasContentIssue false

Relationships Between Bi/Ti Composition Ratio and O2 Concentration for Orientation Control of Bi4Ti3O12 Thin Film Using Mocvd Method

Published online by Cambridge University Press:  10 February 2011

Takeshi Kijima*
Affiliation:
Ecological Technology Development Center, SHARP Corp., 273–1 Kashiwa, Kashiwa-shi, Chiba 277–0005, JPN, kijima@kasiwa.sharp.co.jp
Get access

Abstract

Pt/Bi2SiO5/Si (MIS) and Pt/200nm-Bi4Ti3O12/Pt/30nm-Bi2SiO5/Si (MFMIS:Metal/ Ferroelectric/ Metal/Insulator/Semiconductor) structures were prepared by MOCVD. Oxygen concentration and the Bi/Ti composition ratio determine Bi4Ti3O12 orientation and Bi4Ti3O12 volume in the film, respectively. When the oxygen concentration and the Bi/Ti composition ratio was 33% and 0.65, (001) Bi4Ti3O12 film with the dielectric constant of 40 was obtained. In addition, the capacitance-vs-voltage (C-V) measurement of the Pt/Bi2SiO5/Si structure exhibits normal MIS C-V characteristics. The C-V characteristics of Pt/Bi4Ti3O12/Pt/ Bi2SiO5/Si structure have ferroelectric switching properties with a memory window of about 2.OV Moreover, it is found that the capacitance at zero-bias remains constant for over 24 h.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Moll, J. L., and Tarui, Y., IEEE Trans. Electron. Device. ED–10 (1963) 338.Google Scholar
2. Yoon, Sung-Min, Tokumitsu, E., and Ishiwara, H., Jpn. J. Appl. Phys. 37 (1998) 936.Google Scholar
3. Matsui, Y., Okuyama, M., Noda, M., and Hamakawa, Y., Appl. Phys. A 28 (1982) 161.Google Scholar
4. Fujimori, Y., Izumi, N., Nakamura, T., and Kamisawa, A., Jpn. J. Appl. Phys. 37 (1998) 5207.Google Scholar
5. Kijima, T., Satoh, S., Matsunaga, H., and Koba, M., Jpn. J. Appl. Phys. 35 (1996) 1246.Google Scholar
6. Nakamura, T., Muhammet, R., Shimizu, M., and Shiosaki, T., Jpn. J. Appl. Phys. 32(1993)4086.Google Scholar
7. Kakimi, A., Okamura, S., Ando, S., and Tsukamoto, T., Jpn. J. Appl. Phys. 34 (1995) 5193.Google Scholar
8. Kijima, T., and Matsunaga, H., Jpn. J. Appl. Phys. 37 (1998) 5171.Google Scholar
9. Aurivillius, B.: Acta. Chem. Scand. 18 (1964) 1555.Google Scholar
10. Kim, J. H., Tsurumi, T., Kamiya, T. and Daimon, M.: J. Appi. Phys. 75 (1994) 2924.Google Scholar