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Relationships Between Bi/Ti Composition Ratio and O2 Concentration for Orientation Control of Bi4Ti3O12 Thin Film Using Mocvd Method

Published online by Cambridge University Press:  10 February 2011

Takeshi Kijima
Takeshi Kijima*
Affiliation:
Ecological Technology Development Center, SHARP Corp., 273–1 Kashiwa, Kashiwa-shi, Chiba 277–0005, JPN, kijima@kasiwa.sharp.co.jp
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Abstract

Pt/Bi2SiO5/Si (MIS) and Pt/200nm-Bi4Ti3O12/Pt/30nm-Bi2SiO5/Si (MFMIS:Metal/ Ferroelectric/ Metal/Insulator/Semiconductor) structures were prepared by MOCVD. Oxygen concentration and the Bi/Ti composition ratio determine Bi4Ti3O12 orientation and Bi4Ti3O12 volume in the film, respectively. When the oxygen concentration and the Bi/Ti composition ratio was 33% and 0.65, (001) Bi4Ti3O12 film with the dielectric constant of 40 was obtained. In addition, the capacitance-vs-voltage (C-V) measurement of the Pt/Bi2SiO5/Si structure exhibits normal MIS C-V characteristics. The C-V characteristics of Pt/Bi4Ti3O12/Pt/ Bi2SiO5/Si structure have ferroelectric switching properties with a memory window of about 2.OV Moreover, it is found that the capacitance at zero-bias remains constant for over 24 h.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 596: Symposium Y – Ferroelectric Thin Films VIII , 1999 , 123
Copyright
Copyright © Materials Research Society 2000

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