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Regrowth of Implanted–Amorphous Si
Published online by Cambridge University Press: 28 February 2011
Abstract
A two dimensional model of nucleation and growth is described which is consistent with the following experimental phenomena observed in the regrowth of ion-implanted silicon: (1) Substrate orientation effect on regrowth kinetics. (2) Impurity effects on regrowth kinetics. (3) The activation energy dependence of regrowth rate. (4) Impurity redistribution and supersaturation effect.
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- Copyright © Materials Research Society 1986
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