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Refractory Metal Encapsulation in Copper Wiring

Published online by Cambridge University Press:  25 February 2011

J. Palleau ,
J.C. Oberlin ,
F. Braud ,
J. Torres ,
J. L. Mermet ,
M- J Mouche ,
A. Ermolieff  and
J. Piaget
J. Palleau
Affiliation:
F.T. / CNET, BP 98, 38243 Meylan cedex, France
J.C. Oberlin
Affiliation:
F.T. / CNET, BP 98, 38243 Meylan cedex, France
F. Braud
Affiliation:
F.T. / CNET, BP 98, 38243 Meylan cedex, France
J. Torres
Affiliation:
F.T. / CNET, BP 98, 38243 Meylan cedex, France
J. L. Mermet
Affiliation:
CEA / DTA / LETI, 85X, 38041 Grenoble cedex, France
M- J Mouche
Affiliation:
CEA / DTA / LETI, 85X, 38041 Grenoble cedex, France
A. Ermolieff
Affiliation:
CEA / DTA / LETI, 85X, 38041 Grenoble cedex, France
J. Piaget
Affiliation:
CEA / DTA / LETI, 85X, 38041 Grenoble cedex, France
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Abstract

The thermal stability at the Cu / SiO2 interface has been studied as a function of the annealing atmosphere composition. Using either good vacuum conditions or refractory metal encapsulation, no copper diffusion into SiO2 has been found even for thermal treatments at 500°C for l0h. Moreover, a noticeable accumulation of the refractory metal, ( Cr, Ti ), at the Cu / SiO2 interface has been observed. The diffusion phenomena allows the self-aligned formation of a refractory metal barrier layer at the SiO2 surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 337: Symposium B – Advanced Metallization for Devices and Circuits—Science, Technology and Manufacturing III , 1994 , 225
Copyright
Copyright © Materials Research Society 1994

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References

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