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The Refractive Index and Other Properties of Doped ZnO films

Published online by Cambridge University Press:  01 February 2011

A. L. Cai ,
J. F. Muth ,
H. L. Porter ,
A. Kvit  and
J. Narayan
A. L. Cai
Affiliation:
Department of Electrical and Computer Engineering North Carolina State University, Raleigh, NC 27695
J. F. Muth
Affiliation:
Department of Electrical and Computer Engineering North Carolina State University, Raleigh, NC 27695
H. L. Porter
Affiliation:
Department of Materials Science and Engineering North Carolina State University, Raleigh, NC 27695
A. Kvit
Affiliation:
Department of Materials Science and Engineering North Carolina State University, Raleigh, NC 27695
J. Narayan
Affiliation:
Department of Materials Science and Engineering North Carolina State University, Raleigh, NC 27695
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Abstract

Ordinary and extraordinary indices of refraction, film thickness and waveguide mode information of zinc oxide, zinc oxide doped with nitrogen and zinc oxide doped with tellurium were measured by using a prism coupling waveguide technique. The films were grown on c-axis sapphire substrates by pulsed laser deposition (PLD). High accuracy waveguide measurements show that the ordinary and extraordinary indices of refraction of ZnO samples change with the introduction of nitrogen or tellurium. The densification of films with annealing could also be tracked with precision refractive index measurement. The crystal structure and the optical properties of the films were also characterized by using x-ray diffraction (XRD), transmission electron microscopy (TEM), atomic force microscopy (AFM) and cathodoluminescence (CL).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 764: Symposium C – New Applications for Wide-Bandgap Semiconductors , 2003 , C3.21
Copyright
Copyright © Materials Research Society 2003

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References

1. Ashrafi, A. B. M. Almamun, Suemune, I., Kumano, H., and Tanaka, S., Jpn. J. Appl. Phys., Part 2 41, L1281 (2002)Google Scholar
2.Eagle-Picher Technologies, LLC, http://www.tech.epcorp.comGoogle Scholar
3. Sheng, H., Muthukumar, S., Emanetoglu, N. W., and Lu, Y., Appl. Phys. Lett. 80, 2132 (2002)Google Scholar
4. Bagnall, D. M., Chen, Y. F., Zhu, Z., Yao, T., Koyama, S., Shen, M. Y., and Goto, T., Appl. Phys. Lett. 70, 2230(1997)Google Scholar
5. Makino, T., Segawa, Y., Kawasaki, M., Ohtomo, A., Shiroki, R., Tamura, K., Yasuda, T., and Koinuma, H., Appl. Phys. Lett., 78, 1237 (2001)Google Scholar
6. Teng, C. W., Muth, J. F., Ozgur, U., Bergmann, M. J., Everitt, H. O., Sharama, A. K., Jin, C., an Narayan, J., Appl. Phys. Lett., 76, 979, (2000)Google Scholar
7. Bertolotti, M. and Ferrari, A., Jaskow, A., Palma, A. and Verona, E., J. Appl. Phys. 56, 2943, (1984)Google Scholar
8. Jellison, G. E. Jr and Boatner, L. A., Physical Review B, 58, 3586, (1998)Google Scholar
9. Tien, P. K., Ulrich, R., and Martin, R. J., Appl. Phys. Lett. 14, 291(1969)Google Scholar
10. Chen, Y., Ko, H., Hong, S., Yao, T., Segawa, Y., Appl. Phys. Lett., 80, 1358 (2002)Google Scholar
11. Born, M. and Wolf, E., Principle of Optics (Pergamon, Oxford, 1989)Google Scholar