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Reflection Electron Diffraction and Structural Behavior of Gaas / Gaas (111)B Grown Via Mbe

Published online by Cambridge University Press:  22 February 2011

K. C. Rajkumar ,
P. Chen  and
A. Madhukar
K. C. Rajkumar
Affiliation:
Photonics Materials & Devices Laboratory University of Southern California, CA 90089
P. Chen
Affiliation:
Photonics Materials & Devices Laboratory University of Southern California, CA 90089
A. Madhukar
Affiliation:
Photonics Materials & Devices Laboratory University of Southern California, CA 90089
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Extract

Homoepitaxy on the {111} face of GaAs has been long known to give films with surfaces marred with macroscopic features. We have identified this problem to be tied to the surface phase regime. We have used Reflection High Energy Electron Diffraction (RHEED) to identify a phase regime wherein specular-surfaced GaAs films can be grown. We have found that it is possible to glean information regarding the macroscopic surface morphology by monitoring the variation in the RHEED specular spot intensity during growth. This has allowed in situ monitoring of the macroscopic surface morphology of a growing film in real time which has made it possible to grow specular-surfaced films reproducibly.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 208: Symposium J – Advances in Surface and Thin Film Diffraction , 1990 , 193
Copyright
Copyright © Materials Research Society 1991

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References

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