Hostname: page-component-7bb8b95d7b-5mhkq Total loading time: 0 Render date: 2024-09-18T16:03:16.191Z Has data issue: false hasContentIssue false

Refinement of Plas Samples by Using Afm Image and First Observation of Plas Signals on Amorphous Carbon Nitridea-CNx Films

Published online by Cambridge University Press:  10 February 2011

H. Furukawa
Affiliation:
Department of Electrical Engineering, Gifu University, 1-1 Yanaido, Gifu, 501-11, JAPAN
S. Nitta
Affiliation:
Department of Electrical Engineering, Gifu University, 1-1 Yanaido, Gifu, 501-11, JAPAN
M. Hioki
Affiliation:
Department of Electrical Engineering, Gifu University, 1-1 Yanaido, Gifu, 501-11, JAPAN
T. Iwasaki
Affiliation:
Department of Electrical Engineering, Gifu University, 1-1 Yanaido, Gifu, 501-11, JAPAN
T. Itoh
Affiliation:
Department of Electrical Engineering, Gifu University, 1-1 Yanaido, Gifu, 501-11, JAPAN
S. Nonomura
Affiliation:
Department of Electrical Engineering, Gifu University, 1-1 Yanaido, Gifu, 501-11, JAPAN
Get access

Abstract

The shape of several waveguide end of samples for photoluminescence absorption spectroscopy (PLAS) was studied by atomic force microscope (AFM), because there was an experimental problem where some samples for PLAS did not work. Using the result of AFM, the waveguide end was reshaped by plasma dry etching. The shortening of the etching time was an effective method to improve the structure of the waveguide end. Secondly, the PLAS method was extended to the other materials from a-Si:H. The PLAS signal of amorphous carbon nitride a-CNx was detected for the first time. Amorphous carbon nitride a-CNx film itself and the interface between a-CNx and a-Si02 are found as good as a-Si:H and the interface between a-Si:H and a-Si 3N4+x:H, respectively.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Ranganathan, R. and Taylor, P.C., J. Non-Cryst. Solids 97&98 (1987) 707.Google Scholar
2 Ranganathan, R., Gal, M. and Taylor, P.C., in “Amorphous Silicon Technology and Related Materials”, Vol. 1, ed. Fritzsche, H. (World Scientific, Singapore, 1989) p.461.Google Scholar
3 Gu, S.Q., Taylor, P.C. and Nitta, S., in “Amorphous Silicon Materials and Solar Cells”, AIP Coaf. Proc. 234, ed. Stafford, B.L. (American Institute of Physics, New York, 1991) p.146.Google Scholar
4 Gu, S.Q., Nitta, S. and Taylor, P.C., in “Amorphous Silicon Technology”, (Material Research Society, PA, 1991) p.843.Google Scholar
5 Nitta, S., Miyazima, H., Mukai, M., Nonomura, S., Gu, S.Q. and Taylor, P.C., J. Non-Cryst. Solids 137&138 (1991) 1071.Google Scholar
6 Nitta, S., Nishimura, E., Minamide, T., Uchida, T. and Nonomura, S., J. Non-Cryst. Solids 164–166 (1993) 913.Google Scholar
7 Liu, A. Y., Cohen, M. L., Phys. Rev. B 41, 10727 (1989).Google Scholar
8 Takada, N., Arai, K., Nitta, S., Nonomura, S., Appl. Sur. Sci. 113/114, 274277 (1997).Google Scholar
9 Ohsaki, T., Takada, N., Iwama, K., Nitta, S., Nonomura, S., Journal of Non-Crystalline Solids, 198–200, 132135 (1996).Google Scholar
10 Nitta, S., Takada, N., Sugiyama, K., Itoh, T. and Nonomura, S., J. Non-Cryst. Solids (1998) in print.Google Scholar
11 Robertson, J., Philoso. Mag. B76 (1997) 335.Google Scholar