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Reduction of Whisker-Originated Short between W Polymetal and Contact Plug

  • Yasushi Akasaka (a1), Hiroshi Suzuki (a2), Yuji Yokoyama (a3), Nobuaki Yasutake (a3), Hitomi Yasutake (a3), Susumu Yoshikawa (a3), Yusuke Kohyama (a3), Yoshio Ozawa (a3), Katsuhiko Hieda (a3), Kyoichi Suguro (a3) and Toshihiro Nakanishi (a1)...

Abstract

Whisker-originated short in the self-aligned contact (SAC) W polymetal gate was directly observed for the first time. Short points between gate electrodes and poly-Si plugs in the test structure were identified by emission microscope and cross-sectional TEM samples of those points were made by using focused ion beam (FIB).

Whiskers are formed during high-temperature processing such as LP-CVD SiN. We have proposed that NH3 de-oxidation step inserted in the SiN deposition sequence is effective for suppressing whisker growth. [1] In this study it was also confirmed that 600°C NH 3 pre-flow improved leakage current between gate electrode and contact plugs.

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References

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1. Akasaka, Y. et al., Jpn. J. Appl. Phys. 38, 2385
2. Akasaka, Y. et al., IEEE Trans. Electron Devices, ED–43, 1864 (1996).
3. Akasaka, Y. et al., Mat. Res. Soc. Symp. Proc. VLSI10, p521(2000).

Reduction of Whisker-Originated Short between W Polymetal and Contact Plug

  • Yasushi Akasaka (a1), Hiroshi Suzuki (a2), Yuji Yokoyama (a3), Nobuaki Yasutake (a3), Hitomi Yasutake (a3), Susumu Yoshikawa (a3), Yusuke Kohyama (a3), Yoshio Ozawa (a3), Katsuhiko Hieda (a3), Kyoichi Suguro (a3) and Toshihiro Nakanishi (a1)...

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