Hostname: page-component-848d4c4894-pjpqr Total loading time: 0 Render date: 2024-07-03T21:55:33.588Z Has data issue: false hasContentIssue false
  • English
  • Français

Reduction of Threading Dislocation Density in AlGaN by Indium Incorporation

Published online by Cambridge University Press:  01 February 2011

H. Kang ,
Z. C. Feng ,
I. Ferguson ,
S. P. Guo  and
M. Pophristic
H. Kang
Affiliation:
School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332
Z. C. Feng
Affiliation:
School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332
I. Ferguson
Affiliation:
School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332
S. P. Guo
Affiliation:
EMCORE Corporation, 145 Belmont Drive, Somerset, NJ 08873, U.S.A
M. Pophristic
Affiliation:
EMCORE Corporation, 145 Belmont Drive, Somerset, NJ 08873, U.S.A
Get access

Abstract

The addition of indium, even to small concentrations, to AlGaN has resulted in improved optical and doping properties for these materials. This paper is the first report of improved structural properties for indium containing AlGaN layers. A systematic series of the AlGaN layers with nominal concentration of 20% aluminum were grown by metal-organic chemical vapor deposition with traces amounts of indium incorporated into the layers (up to 0.15% indium). X-ray diffraction analysis of the layers was completed using Williamson Hall plots and reciprocal space mapping to investigate any change in the columnar structure of the initial AlGaN layers. It was found that the threading dislocation densities and lateral coherence length showed a systematic variation with indium incorporation. The threading dislocation density is lowered as indium composition increased with a corresponding increase in lateral coherence length. This indicates that even the incorporation of trace amounts of indium improves the structural properties of these epilayers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 798: Symposium Y – GaN and Related Alloys , 2003 , Y5.71
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Kang, H., Spencer, N., Nicol, D., Feng, Z.C., Ferguson, I., Guo, S., Pophristic, M., and Peres, B., Mat. Res. Soc. Symp. Proc. 743, L6.12.1 (2002)Google Scholar
2. Dupuis, R.D., J. Cryst. Growth 178 56–73 (1997)Google Scholar
3. Hirayama, H., Kinoshita, A., Yamabi, T., Enomoto, Y., Hirata, A., Araki, T., Nanishi, Y., and Aoyagi, Y., Appl. Phys. Lett., 81, 207–209 (2002)Google Scholar
4. Guo, S., Pophristic, M., Ferguson, I., J. Cryst. Growth 252 486–492 (2003)Google Scholar
5. Adivarahan, V., Simin, G., Tamulaitis, G., Srinivasan, R., Yang, J., Asif Khan, M., Shur, M. S. and Gaska, R., Appl. Phys. Lett., 79, 1903–1905 (2001)Google Scholar
6. Lua, C. J., Bendersky, L. A., Lu, Hai and Schaff, W. J., Appl. Phys. Lett., 83, 2817–2819 (2003)Google Scholar
7. Feng, Z.H., Yang, H., Zhang, S.M., and Wang, Y.T., J. Cryst. Growth 235 207–211 (2002)Google Scholar
8. Monroy, E., Gogneau, N., Jalabert, D., Amalric, E., Hori, Y., Enjalbert, F., Dang, L., and Daudin, B. Appl. Phys. Lett., 82, 2242–2233 (2003)Google Scholar
9. Liu, Y., Egawa, T., Ishikawa, H., Jimbo, T., J. Cryst. Growth 259 245–251 (2003)Google Scholar
10. Fewster, P., “X-Ray Scattering from semiconductors”, Imperial Press, London, 345 2000).Google Scholar
11. Fewster, P., “X-Ray and Neutron Dynamical Diffraction: Theory and Applications”, NATO ASI Series B: Physics, 357, 321 (1996).Google Scholar
12. Bowen, D., “High Resolution XRD and Topography”, Talyor & Francis, 67 (2001).Google Scholar
13. Metzger, T., Hopler, R., Born, E., and Ambacher, O., Phil. Mag., A 77, 1013–1025 (1998).Google Scholar
14. Wang, H., Zhang, J., Chen, C., Fareed, Q., and Yang, J.,, Appl. Phys. Lett., 81, 605–607 (2002).Google Scholar
15. Heinke, H., Kirchner, V., Einfeldt, S., and Hommel, D., Phys. Stat. Sol., A 172, 391–395 (1999).Google Scholar
16. Williamson, G. and Hall, W., Acta. Metall., 1, 22 (1953).Google Scholar
17. Keijser, De et al, J. Appl. Crystallogr., 16, 309 (1983)Google Scholar