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Reduction of the Defect Density in a-Si:H Deposited at ≤250°C

  • Hitoshi Nishio (a1), Gautam Ganguly (a2) and Akihisa Matsuda (a2)


We present a method to reduce the defect density in hydrogenated amorphous silicon (a-Si:H) deposited at low substrate temperatures similar to those used for device fabrication . Film-growth precursors are energized by a heated mesh to enhance their surface diffusion coefficient and this enables them to saturate more surface dangling bonds.



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