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Reduction of the Defect Density in a-Si:H Deposited at ≤250°C

  • Hitoshi Nishio (a1), Gautam Ganguly (a2) and Akihisa Matsuda (a2)

Abstract

We present a method to reduce the defect density in hydrogenated amorphous silicon (a-Si:H) deposited at low substrate temperatures similar to those used for device fabrication . Film-growth precursors are energized by a heated mesh to enhance their surface diffusion coefficient and this enables them to saturate more surface dangling bonds.

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References

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1. Ganguly, G. and Matsuda, A., MRS Symp. Proc. 258, 39 ( 1992 )
2. Ganguly, G. and Matsuda, A., Phys. Rev. B 47, 3661 (1993 )
3. Itabashi, N., Kato, K., Nishiwaki, N., Goto, T., Yamada, C., and Hirota, E., Jpn. J. Appl. Phys. 28, (1989 ) L325
4. Hata, N., Matsuda, A., and Tanaka, K., in Symp. Proc. " 8th Int'l Symp. Plasma Chem." ed. Akashi, K. and Kinbara, A., (IUPAC, Tokyo, Japan, 1987 )p. 500.
5. Toyoshima, Y., Arai, K., Matsuda, A., and Tanaka, K., J. Non-Cryst. Solids, 137 & 138, 765 ( 1991 )
6. Morimoto, A., Matsumoto, M., Kumeda, M. and Shimizu, T., Appl. Phys. Lett. 59, 2130 ( 1991)

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