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Reduction of dislocation density in AlGaN with high AlN molar fraction by using a rugged AlN epilayer

  • Akira Ishiga (a1), Takashi Onishi (a1), Yuhuai Liu (a2), Masaya Haraguchi (a3), Noriyuki Kuwano (a4), Tomohiko Shibata (a5), Mitsuhiro Tanaka (a5), Hideto Miyake (a1) and Kazumasa Hiramatsu (a1)...

Abstract

A method for making AlGaN with a high AlN molar fraction and low dislocation density is needed for fabricating deep ultraviolet emitters and detectors. In this study, we reduced the dislocation density in AlGaN over a large surface area by using low-pressure MOVPE on a continuously rugged epitaxial AlN substrate. The AlN molar fraction of the AlxGa1-xN was × = 0.51, and atomic steps in the surface were clearly observed with an atomic force microscope (AFM). In addition, the dislocation density was estimated to be 8.8 × 107 cm−2, which is two orders of magnitude lower than that of AlGaN grown on a flat AlN epitaxial layer. Our results indicate that the dislocation density of AlGaN can be greatly reduced by using a rugged AlN epitaxial substrate with continuously inclined facet.

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Reduction of dislocation density in AlGaN with high AlN molar fraction by using a rugged AlN epilayer

  • Akira Ishiga (a1), Takashi Onishi (a1), Yuhuai Liu (a2), Masaya Haraguchi (a3), Noriyuki Kuwano (a4), Tomohiko Shibata (a5), Mitsuhiro Tanaka (a5), Hideto Miyake (a1) and Kazumasa Hiramatsu (a1)...

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