Skip to main content Accessibility help
×
×
Home

Reducing Dislocation Density by Sequential Implantation of Ge and C in Si

  • Seongil Im (a1), Jack Washburn (a1), Ronald Gronsky (a1), Nathan W. Cheung (a2), Kin Man Yu (a3) and Joel W. Ager (a3)...

Abstract

Carbon implantation was performed after high dose(5 x 1016/cm2) Ge implantation into [100] oriented Si substrates to study the effect of sequential implantation on dislocation nucleation. When the nominal peak concentration of implanted C is over 0.55 at%, Dislocations in the SiGe layer containing C are considerably reduced in density after solid phase epitaxial(SPE) annealing at 800°C for 1 hour, compared to the SiGe layer without C. These results suggest that during annealing, C atoms compensate the Geinduced misfit strain which causes dislocation generation in the region of peak Ge concentration. Channeling spectra obtained by RBS analysis show only 5% to 6% minimum back scattering yield as C atoms suppress the dislocation generation.

Copyright

References

Hide All
1. Jain, S. C. and Hayes, W., Semicon. Sci. Technol. 6, 547576, (1991)
2. Strained-Layer Superlattices : Materials Science and Technology, Semiconductors and Semimetals, Vol.33, edited by Pearsall, Thomas P., ACADEMIC PRESS, INC., 223304 (1991)
3. Yu, K. M., Brown, I. G. and Seongil Im, Mat. Res. Soc. Symp. Proc., 235, 293(1992)
4. Paine, D.C., Howard, D. J., and Stoffel, N. G., J. Electronic Materials, 20(10), 735(1991)
5. Fukami, Akira, Shoji, Ken-ichi, Nagano, Takahiro and Yang, Cary Y., Microelectronic Engineering, 15, 15 (1991)
6. Fukami, Akira, Shoji, Ken-ichi, Nagano, Takahiro and Yang, Cary Y., Appl. Phys. Lett., 5(22), 2345(1990)
7. Properties of Silicon, EMIS Data reviews series No.4, published by INSPEC, The Institution of Electrical Engineers, New York, (1988) p. 285
8. Im, S., Washburn, J, Gronsky, R., Cheung, N. W. and Yu, K. M., “Defect Control During Solid Phase Epitaxial Growth of SiGe Alloy Layers”, submitted to Appl. Phys. Lett. 1993
9. Ira, S., Washburn, J, Gronsky, R., Cheung, N. W. and Yu, K. M., MRS Symp. Proc. 1992 (in press)
10. Prussin, S. and Jones, K. S., J. Electrochem. Soc., 137(6), 1912 (1990)
11. Eberl, K., Iyer, S. S., Zollner, S., Tsang, J.C. and LeGoues, F. K., Appl. Phys. Lett., 60(24), 3033(1992)
Recommend this journal

Email your librarian or administrator to recommend adding this journal to your organisation's collection.

MRS Online Proceedings Library (OPL)
  • ISSN: -
  • EISSN: 1946-4274
  • URL: /core/journals/mrs-online-proceedings-library-archive
Please enter your name
Please enter a valid email address
Who would you like to send this to? *
×

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed