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Reduced Pressure - Chemical Vapor Deposition of Ge thick layers on Si(001) for microelectronics and optoelectronics purposes

Published online by Cambridge University Press:  17 March 2011

J.M. Hartmann ,
A.M. Papon ,
P. Holliger ,
G. Rolland ,
T. Billon ,
M. Rouvière ,
L. Vivien  and
S. Laval
J.M. Hartmann
Affiliation:
CEA-DRT, LETI / D2NT & DPTS, CEA – GRE, 17, Avenue des Martyrs 38054 Grenoble Cedex, France
A.M. Papon
Affiliation:
CEA-DRT, LETI / D2NT & DPTS, CEA – GRE, 17, Avenue des Martyrs 38054 Grenoble Cedex, France
P. Holliger
Affiliation:
CEA-DRT, LETI / D2NT & DPTS, CEA – GRE, 17, Avenue des Martyrs 38054 Grenoble Cedex, France
G. Rolland
Affiliation:
CEA-DRT, LETI / D2NT & DPTS, CEA – GRE, 17, Avenue des Martyrs 38054 Grenoble Cedex, France
T. Billon
Affiliation:
CEA-DRT, LETI / D2NT & DPTS, CEA – GRE, 17, Avenue des Martyrs 38054 Grenoble Cedex, France
M. Rouvière
Affiliation:
also STMicroelectronics, 38926 Crolles Cedex, France
L. Vivien
Affiliation:
IEF (UMR 8622 CNRS), Bât. 220, Université Paris-Sud, 91405 Orsay Cedex, France
S. Laval
Affiliation:
IEF (UMR 8622 CNRS), Bât. 220, Université Paris-Sud, 91405 Orsay Cedex, France
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Abstract

Ge-based photodetectors operating in the telecommunication wavelength range (1.3-1.6 μm) of silica fibers are highly desirable for the development of optical interconnections on SOI substrates. We have therefore investigated the structural and optical properties of Ge thick films grown directly onto Si(001) substrates using a production-compatible Reduced Pressure Chemical Vapor Deposition system. The thick Ge layers grown using a low-temperature / high temperature approach are in a definite tensile-strain configuration, with a threading dislocation density for as-grown layers of the order of 3×107 cm−2. The surface of those Ge thick layers is rather smooth, especially when considering the large lattice mismatch in-between Ge and Si. The root mean square roughness is indeed of the order of 2 nm only for as-grown layers. The layers produced are of high optical quality. An absorption coefficient α ≈10000 cm−1 @ 1.3μm (4500 cm−1 @ 1.55μm) has been found at room temperature for our Ge thick layers. A 30 meV bandgap shrinkage with respect to bulk Ge (0.77 eV ≎ 0.80 eV) is observed as well in those tensilestrained Ge epilayers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 809: Symposium B – High-Mobility Group-IV Materials and Devices , 2004 , B4.3
Copyright
Copyright © Materials Research Society 2004

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References

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