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Reconstruction of Nonpolar Gan Surfaces

Published online by Cambridge University Press:  15 February 2011

J. Elsner ,
M. Haugk  and
Th. Frauenheim
J. Elsner
Affiliation:
Theoretische Physik III, Technische Universität Chernnitz, 09107 Chemnitz, Germany
M. Haugk
Affiliation:
Theoretische Physik III, Technische Universität Chernnitz, 09107 Chemnitz, Germany
Th. Frauenheim
Affiliation:
Theoretische Physik III, Technische Universität Chernnitz, 09107 Chemnitz, Germany
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Abstract

A density-functional theory based nonorthogonal tight-binding scheme is used to investigate the nonpolar surfaces of GaN in the wurtzite and zinc-blende phases. In III-V semiconductors the nonpolar surfaces mainly reconstruct by a bond-length conserving rotation of the surface atoms. In contrast to that for all nonpolar GaN surfaces this bond-length is shortened by ≈3 − 4%. We furthermore find the rotation angle to be significantly smaller than could be expected from results for GaAs and GaP.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 423: Symposium E – III-Nitride, SiC, and Diamond Materials for Electronic , 1996 , 421
Copyright
Copyright © Materials Research Society 1996

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References

1. Brandt, O., Yang, H., Jenichen, B., Suzuki, Y., Däweritz, L. and Ploog, K. H., Phys. Rev.B 52 (1995) R2253 Google Scholar
2. Porezag, D., Frauenheim, Th. and Köhler, Th. Phys. Rev. B 51 (1995) 12947.Google Scholar
3. Frauenheim, Th., Weich, F., Köhler, Th., Uhlmann, S., Porezag, D. and Seifert, G., Phys. Rev. B 52 (1995) 492.Google Scholar
4. Widany, J., Frauenheim, Th., Köhler, Th., Sternberg, M., Porezag, D., Jungnickel, G. and Seifert, G., Phys. Rev. B 53 (1996) 4443.Google Scholar
5. LaFermina, J.P. and Duke, C.B., J. Vac. Sci. Technol. A9 (1991) 1847.Google Scholar
6. Duke, C. P., J. Vac. Sci. Technol. A6 (1988) 1957.Google Scholar
7. Kahn, A., Surf. Sci. Rept. 3 (1983) 193.Google Scholar
8. Alves, A., Hebenstreit, J. and Scheffier, M. Phys. Rev. B44 6188.Google Scholar
9. Swarts, C.A., Goddard, W.A. III and Mc Gill, T.C., J. Vac. Sci. Technol. 17(5) (1980) 982.Google Scholar
10. Wang, Y.R. and Duke, C.B., Surf. Sci. 192 (1987) 309.Google Scholar
11. Jaffe, J. E., Pandey, R. and Zapol, P., Phys. Rev. B 53 (1996) R4209.Google Scholar
12. Mailhiot, C., Duke, C.B. and Chadi, D.J., Surf. Sci. 149 (1985) 366.Google Scholar