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Recombination Under Double Injection Conditions in a-Si:H Based Diodes.

Published online by Cambridge University Press:  28 February 2011

R. Konenkamp  and
Arun Madan
R. Konenkamp
Affiliation:
Hahn-Meitner-Institut für Kernforschung Berlin, I Berlin 39, FRG
Arun Madan
Affiliation:
Solar Energy Research Institute, Golden, CO 80401, USA
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Abstract

The junction recovery technique is used to investigate recombination parameters and kinetics in thin film a-Si:H diodes. It is found that double injection occurs in most of the p-i-n type samples at sufficient forward bias and that the recovery currents are dominated by the extraction of trapped holes from the valence bandtail. The mobility-lifetime product of the recovered carriers is seen to be strongly dependent on the dopant concentration in the active layers of the devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 49: Symposium F – Materials Issues in Applications of Amorphous Silicon Technology , 1985 , 89
Copyright
Copyright © Materials Research Society 1985

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