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Recombination of Localized Excitons in InGaN Single- and Multiquantum-Well Structures

  • S. Chichibu (a1), T. Azuhata (a2), T. Sota (a2) and S. Nakamura (a3)

Abstract

Spontaneous emission mechanisms of InGaN single quantum well (SQW) blue and green light emitting diodes (LEDs) and multiquantum well (MQW) laser diode (LD) structures were investigated. Their static electroluminescence (EL) peak was assigned to the recombination of excitons localized at certain potential minima in the quantum well (QW). The transmission electron micrographs (TEM) indicated fluctuation of In molar fraction in the QWs. The blueshift of the EL peak caused by the increase of the driving current was explained by combined effects of the quantum-confinement Stark effect and band filling of the localized states by excitons.

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Recombination of Localized Excitons in InGaN Single- and Multiquantum-Well Structures

  • S. Chichibu (a1), T. Azuhata (a2), T. Sota (a2) and S. Nakamura (a3)

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