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Recombination of Excess Carriers at High Excitation Density in Amorphous Silicon

Published online by Cambridge University Press:  01 January 1993

M. Kunst ,
C. Haffer  and
C. Swiatkowski
M. Kunst
Affiliation:
Hahn-Meitner-Institut, SI Solare Energetik, Glienicker Str. 100, 1000 Berlin 39, Germany
C. Haffer
Affiliation:
Hahn-Meitner-Institut, SI Solare Energetik, Glienicker Str. 100, 1000 Berlin 39, Germany
C. Swiatkowski
Affiliation:
Hahn-Meitner-Institut, SI Solare Energetik, Glienicker Str. 100, 1000 Berlin 39, Germany
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Abstract

Excess electron-hole recombination at high excitation densities in a-Si:H is investigated by comparison of the transient photoconductivity during and just after excitation in the nanosecond time range to numerical models. A simple one parameter recombination model fits the experimental data satisfactorily. An extension of the model where deep trapping is taken into account explains also the transient photoconductivity in Boron doped a-Si:H.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 461
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

[1] Vanderhaghen, R., Mourchid, A., Hulin, D., Young, D.A., Nighan, W.L. Jr., and Fauchet, P.M. J.Non-Cryst.Solids 137&138. 543 l991.Google Scholar
[2] Esser, A., Heesel, H., Kurz, H., Wang, C., Parsons, G.N., and Lucovsky, G., Phys.Rev. B47., 3593 l993.Google Scholar
[3] Grünow, P., Herm, D., Könenkamp, R., Küppers, U., Kunst, M., Neitzert, H.C. and Werner, A. Mat.Res.Soc.Symp.Proc. Vol.149, 363 (1989)Google Scholar
[4] Kunst, M., Neitzert, H.-C. and Ruebel, H., Phys.Rev. B44, 1081 (1991)Google Scholar
[5] Kunst, M. and Neitzert, H.-C., J.Appl.Phys. 69, 8320 (1991)Google Scholar
[6] Madan, A. and Shaw, M.P., The Physics and Applications of amorphous Semiconductors (Academic, New York 1988) Google Scholar