- Cited by 19
Sullivan, Gerry Gertner, Ed Pittman, Richard Chen, Mary Pierson, Richard Higgins, Aiden Chen, Qisheng Yang, Jin-Wu Smith, R. Peter Perez, Raul Khan, Abdur Redwing, Joan and McDermott, Brian 1999. AlGaN Microwave Power HFETs on Insulating SiC Substrates. MRS Proceedings, Vol. 572, Issue. ,
Kuznetsov, N. I. Nikolaev, A. E. Zubrilov, A. S. Melnik, Yu. V. and Dmitriev, V. A. 1999. Insulating GaN:Zn layers grown by hydride vapor phase epitaxy on SiC substrates. Applied Physics Letters, Vol. 75, Issue. 20, p. 3138.
Graff, J.W. Schubert, E.F. and Osinsky, A. 2000. On the reduction of base resistance in GaN-based heterojunction bipolar transistors. p. 28.
Morrison, D.J Wright, N.G Horsfall, A.B Johnson, C.M O’Neill, A.G Knights, A.P Hilton, K.P and Uren, M.J 2000. Effect of post-implantation anneal on the electrical characteristics of Ni 4H-SiC Schottky barrier diodes terminated using self-aligned argon ion implantation. Solid-State Electronics, Vol. 44, Issue. 11, p. 1879.
Kopp, B.A. 2000. X-band transmit/receive module overview. Vol. 2, Issue. , p. 705.
Ostling, M. Koo, S.-M. Lee, S.-K. Danielsson, E. and Zetterling, C.-M. 2001. Recent advances and issues in SiC process and device technologies. Vol. 2, Issue. , p. 1173.
Kuball, M. Uren, M.J. Hayes, J.M. Martin, T. Birbeck, J.C.H. Balmer, R.S. and Hughes, B.T. 2001. Self-Heating Effects in High-Power AlGaN/GaN HFETs. MRS Proceedings, Vol. 693, Issue. ,
Khlebnikov, Y Khlebnikov, I Parker, M and Sudarshan, T.S 2001. Local epitaxy and lateral epitaxial overgrowth of SiC. Journal of Crystal Growth, Vol. 233, Issue. 1-2, p. 112.
Ostling, M. Koo, S.-M. Lee, S.-K. Danielsson, E. Domeij, M. and Zetterling, C.-M. 2002. SiC device technology for high voltage and RF power applications. Vol. 1, Issue. , p. 31.
Kuball, M. Rajasingam, S. Sarua, A. Uren, M. J. Martin, T. Balmer, R. S. and Hilton, K. P. 2002. Self-Heating Effects in Multi-Finger AlGaN/GaN HFETs. MRS Proceedings, Vol. 743, Issue. ,
Kuball, M. Hayes, J.M. Uren, M.J. Martin, I. Birbeck, J.C.H. Balmer, R.S. and Hughes, B.T. 2002. Measurement of temperature in active high-power AlGaN/GaN HFETs using Raman spectroscopy. IEEE Electron Device Letters, Vol. 23, Issue. 1, p. 7.
Kopp, B.A. Borkowski, M. and Jerinic, G. 2002. Transmit/receive modules. IEEE Transactions on Microwave Theory and Techniques, Vol. 50, Issue. 3, p. 827.
Kuball, M. Rajasingam, S. Sarua, A. Uren, M. J. Martin, T. Hughes, B. T. Hilton, K. P. and Balmer, R. S. 2003. Measurement of temperature distribution in multifinger AlGaN/GaN heterostructure field-effect transistors using micro-Raman spectroscopy. Applied Physics Letters, Vol. 82, Issue. 1, p. 124.
Horsfall, Alton B. Johnson, C. Mark Wright, Nicolas G. and O'Neill, Anthony G. 2003. Optimisation of a 4H-SiC Enhancement Mode Power JFET. Materials Science Forum, Vol. 433-436, Issue. , p. 777.
Liu, W.L. Turin, V.O. Balandin, A.A. Chen, Y.L. and Wang, K.L. 2004. The Ambient Temperature Effect on Current-Voltage Characteristics of Surface-Passivated GaN-Based Field-Effect Transistors. MRS Internet Journal of Nitride Semiconductor Research, Vol. 9, Issue. ,
Bhatnagar, Praneet Horsfall, Alton B. Wright, Nicolas G. Johnson, C. Mark Vassilevski, Konstantin and O'Neill, Anthony G. 2006. Analytical Modelling of I-V Characteristics for 4H-SiC Enhancement Mode VJFET. Materials Science Forum, Vol. 527-529, Issue. , p. 1195.
Regoliosi, P. Reale, A. Di Carlo, A. Romanini, P. Peroni, M. Lanzieri, C. Angelini, A. Pirola, M. and Ghione, G. 2006. Experimental validation of GaN HEMTs thermal management by using photocurrent measurements. IEEE Transactions on Electron Devices, Vol. 53, Issue. 2, p. 182.
Zhu, C.L. Rusli and Zhao, P. 2007. Dual-channel 4H-SiC metal semiconductor field effect transistors. Solid-State Electronics, Vol. 51, Issue. 3, p. 343.
Konstantinov, A. Pham, H. Lee, B. Park, K.S. Kang, B. Allerstam, F. and Neyer, T. 2018. Investigation of avalanche ruggedness of 650 V Schottky-barrier rectifiers. Solid-State Electronics, Vol. 148, Issue. , p. 51.
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SiC MESFET's have shown an RF power density of 4.6 W/mm at 3.5 GHz and a power added efficiency of 60% with 3 W/mm at 800 MHz, demonstrating that SiC devices are capable of very high power densities and high efficiencies. Single devices with 48 mm of gate periphery were mounted in a hybrid circuit and achieved a maximum RF power of 80 watts CW at 3.1 GHz with 38% PAE.
Hide All Joshi, R.P., J. Appl. Phys. 78, 5518(1995).10.1063/1.359670 Slack, G.A, J. Appl. Phys. 35, 3460(1964).10.1063/1.1713251 Weitzel, C.E., Palmour, J.W., Carter, C.H. Jr, Nordquist, K.J., Elect. Dev. Let. 15, 406(1994).10.1109/55.320983 Sheppard, S. T., Doverspike, K., Pribble, W. L., Allen, S. T., Palmour, J. W., Kehias, L. T., Jenkins, T. J., 56th Annual Device Research Conference, 1998.
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