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Recent Progress in High Power Excimer Laser Development for Producing Next Generation Large-Area Electronic Devices

  • A. Demin (a1), V. Vodchits (a1), A. Eltzov (a1), O. Kristoforov (a1), Yu. Kirukhin (a1), A. Vinokhodov (a1), V. Borisov (a1), R. Osmanov (a2), I. Bragin (a2), K. Vogler (a2), U. Rebhan (a2), M. Rahe (a2), U. Stamm (a2) and D. Basting (a2)...

Abstract

This paper reviews the results of the development of high power (up to 1 kW), high energy (up to 10J) prototypes of excimer lasers that are of interest to meet expanding requirements of the electronic industry. Some experimental characteristics are presented for various excimer prototypes operating at the important wavelength of 308nm (XeCl). Keywords: Excimer laser, average power, output energy, annealing

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2. Baranov, V.Y.. Borisov, V.M., Khristoforov, O.B.. Wide aperture electric discharge XeCl laser with UV preionization and 20J output energy. Sov.J.Quantum Electronic, 17, pp.978983 August.1987
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4. Borisov, V.M., Khristoforov, O.B., Kiryukhin, Yu.B., Vinokhodov, A.Yu., Demin, A.I., Vodchits, V.A., Eltsov, A.V.. Prospects for high power, high repetition rate industrial excimer laser. XIII International Symposium an Gas Flow anm Chemical Lasers and High Power Laserr Conference, Proc. SPIE, 4184, p.348352., 2000
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6. Borisov, V.M., Khristoforov, O.B., Kiryukhin, Yu.B., Vinokhodov, A.Yu., Demin, A.I., Vodchits, V.A., Basting, D., Stamm, U., Voss, F., Bragin, I.. High average power excimer laser. Proc.SPIE, 3574, p.56., 1998
7. Limanov, A.B., Borisov, V.M., Vinokhodov, A.Yu., Demin, A.I., El'tsov, A.I., Kiirukhin, Yu.B., Khristoforov, O.B., Development of Linear Sequential Lateral Solidification Technique to Fabricate Quasi-Single-Crystal Super-Thin Si Films for High-Performance Thin Film Transistor Devices, Perspectives, Science, and Technologies for Novel Silicon on Insulator Devices, 55-61, P.L.F. Hemment et al. © 2000 Kluwer Academic Publishers
8. Limanov, A.B., Chubarenko, V.A., Borisov, V.M., Vinokhodov, A.Yu., Demin, A.I., Khristoforov, O.B., El'tsov, A.V., Kirukhin, Yu.B. Investigation in Si films obtained by SLS technique using of 3 kHz excimer laser with stripped output beam. Russian Microelectronics 28, pp. 2533, 1999

Recent Progress in High Power Excimer Laser Development for Producing Next Generation Large-Area Electronic Devices

  • A. Demin (a1), V. Vodchits (a1), A. Eltzov (a1), O. Kristoforov (a1), Yu. Kirukhin (a1), A. Vinokhodov (a1), V. Borisov (a1), R. Osmanov (a2), I. Bragin (a2), K. Vogler (a2), U. Rebhan (a2), M. Rahe (a2), U. Stamm (a2) and D. Basting (a2)...

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