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Recent Improvements in Dry Etching of Hg1−xCdxTe By Ch4 Based Electron Cyclotron Resonance Plasmas

Published online by Cambridge University Press:  10 February 2011

M. Seelmann-Eggebert ,
A. Rar ,
H. Zimmermann  and
P. Meisen
M. Seelmann-Eggebert
Affiliation:
Fraunhofer Institut für Angewandte Festköperphysik, 79108 Freiburg, Germany
A. Rar
Affiliation:
presently at National Research Institute for Metals, Tsukuba, Ibaraki 305, Japan.
H. Zimmermann
Affiliation:
Fraunhofer Institut für Angewandte Festköperphysik, 79108 Freiburg, Germany
P. Meisen
Affiliation:
Fraunhofer Institut für Angewandte Festköperphysik, 79108 Freiburg, Germany
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Abstract

Significant improvements of a previously reported etching process [1] for Hg1−xCdxTe have been achieved with respect to etch rate, surface morphology and surface stoichiometry by optimization of the process parameters. The gas phase and surface reactions driving the etching process have been analyzed by combined optical and electrical characterization of the plasma and surface analyses of the samples. A reaction scheme is suggested which allows to model and upscale the process in a consistent manner.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 487: Symposium I – Semiconductors for Room-Temperature Radiation II , 1997 , 637
Copyright
Copyright © Materials Research Society 1998

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References

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