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Recent Advances in Si And Ge Zone-Melting Recrystallization

Published online by Cambridge University Press:  25 February 2011

C. K. Chen ,
M. W. Gels ,
H. K. Choi ,
B-Y. Tsaur  and
John C. C. Fan
C. K. Chen
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology Lexington, Massachusetts 02173-0073
M. W. Gels
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology Lexington, Massachusetts 02173-0073
H. K. Choi
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology Lexington, Massachusetts 02173-0073
B-Y. Tsaur
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology Lexington, Massachusetts 02173-0073
John C. C. Fan
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology Lexington, Massachusetts 02173-0073
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Abstract

By improving the thermal uniformity and stability of our graphite-strip-heater oven, we have been able to significantly improve the overall quality of ZMR Si films. We have observed unbranched subboundaries and new types of defects that are less extended than the usual sub-boundaries. The overall wafer flatness has been improved so that total warp is less than 4 μm for 3-inch wafers. We have also utilized the ZMR technique for producing thin Ge-on-insulator films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 35: Symposium A – Energy Beam-Solid Interactions and Transient Thermal Processing/1984 , 1984 , 613
Copyright
Copyright © Materials Research Society 1985

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References

REFERENCES

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