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Real-Time Spectroscopic Ellipsometry Study of the Thermal Cleaning Process for Silicon Epitaxial Growth by UHV-CVD

Published online by Cambridge University Press:  10 February 2011

K. Nozawa ,
K. Katayama ,
Y. Kanzawa ,
Q. Sugahara ,
T. Saitoh  and
M. Kubo
K. Nozawa
Affiliation:
Matsushita Electric Industrial Co., Ltd., Central Research Laboratories, Osaka, Japan
K. Katayama
Affiliation:
Matsushita Electric Industrial Co., Ltd., Central Research Laboratories, Osaka, Japan
Y. Kanzawa
Affiliation:
Matsushita Electric Industrial Co., Ltd., Central Research Laboratories, Osaka, Japan
Q. Sugahara
Affiliation:
Matsushita Electric Industrial Co., Ltd., Central Research Laboratories, Osaka, Japan
T. Saitoh
Affiliation:
Matsushita Electric Industrial Co., Ltd., Central Research Laboratories, Osaka, Japan
M. Kubo
Affiliation:
Matsushita Electric Industrial Co., Ltd., Central Research Laboratories, Osaka, Japan
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Abstract

Real-time spectroscopic ellipsometry (RTSE) method was applied to study thermal cleaning process of silicon surfaces for epitaxial growth by ultra-high vacuum chemical vapor deposition (UHV-CVD). For the first time, in-situ observation of oxide decomposition process under Si2H6 ambience was carried out. The substrates with thin oxide formed by wet chemical treatment were heated up by infrared heater under UHV or under Si2H6 ambience in an UHV-CVD chamber and the oxide decomposition processes were observed by RTSE. Ellipsometric parameters Psi and Delta increase with the progress of oxide decomposition process and become constant with the completion of the decomposition. It was found that the oxide decomposition process consists of two phases and rate-determing processes are different in each phase. It was also found that Si2H6 lowers the activation energies of oxide decomposition process in each phase.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 569: Symposium U – In Situ Process Diagnostics and Modelling , 1999 , 83
Copyright
Copyright © Materials Research Society 1999

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References

REFERENCES

1 Harame, D.L., Comfort, J.H., Cressler, J.D., Crabbě, E.F., Sun, J.Y.-C, Meyerson, B.S. and Tice, T., IEEE Transactions on Electron Devices. Vol.42, No.3 p.455(1995)10.1109/16.368039Google Scholar
2 Frantsuzov, A.A. and Makrushin, I.I., Thin Solid Films 32, p.247 (1976)10.1016/0040-6090(76)90305-9Google Scholar
3 Tromp, R., Rubloff, G. W. and LeGoues, F.K., Phys. Rev. Lett. Vol.55, No.21, p.2332(1985)10.1103/PhysRevLett.55.2332Google Scholar
4 Liehr, M., Lewis, J.E. and Rubloff, G.W., J. Vacuum Science and Technology A5 p. 1559 (1987)10.1116/1.574564Google Scholar
5 Kobayashi, Y., Shinoda, Y. and Sugii, K., Jpn. J. Appl. Physics Vol.29, No.6, p.1004 (1990)10.1143/JJAP.29.1004Google Scholar
6 Hirayama, H., Tatsumi, T., Ogura, A. and Aizaki, N., Appl. Phys. Lett. Vol.51, p.2213 (1987)10.1063/1.99009Google Scholar