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Real-Time Monitoring Of GaAs(100) Etching By Surface Photoabsorption

Published online by Cambridge University Press:  15 February 2011

Joseph Eng Jr. ,
Hongbin Fang ,
Chaochin Su ,
Sujata Vemuri ,
Irving P. Herman  and
Brian E. Bent
Joseph Eng Jr.
Affiliation:
Columbia Radiation Laboratory and Departments of Chemistry
Hongbin Fang
Affiliation:
Columbia Radiation Laboratory and Departments of Chemistry
Chaochin Su
Affiliation:
Columbia Radiation Laboratory and Departments of Chemistry
Sujata Vemuri
Affiliation:
Applied Physics, Columbia University, New York, NY 10027
Irving P. Herman
Affiliation:
Applied Physics, Columbia University, New York, NY 10027
Brian E. Bent
Affiliation:
Columbia Radiation Laboratory and Departments of Chemistry
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Abstract

Surface photoabsorption (SPA) has been applied to monitor, in real time, the surface of GaAs(100) during chemical dry etching by a molecular beam of HCl. Changes in the HCl flux to the surface at a constant temperature (840 K) have been used to induce changes in the Ga:As ratio on the surface. These changes in surface stoichiometry have been detected in situ via SPA measurements of the transient fractional change in the reflectance of p-polarized, 488 nm light that is incident onto the surface near the pseudo-Brewster angle. On the basis of results from prior applications of SPA to the study the atomic layer deposition of GaAs, the changes in the SPA signal as a function of the etching parameters can be correlated with changes in the relative surface densities of Ga and As. The findings are confirmed by independent determinations of the changes in surface stoichiometry made by measuring the time-integrated difference in the fluxes of Ga- and As-containing etching products evolved from the surface as a function of the HC1 flux.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 406: Symposium L – Diagnostic Techniques for Semiconductor Materials Processing , 1995 , 151
Copyright
Copyright © Materials Research Society 1996

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References

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