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Real-Time Monitoring by Spectroscopic Ellipsometry and Desorption Mass Spectroscopy During Molecular Beam Epitaxy of AlGaAs/GaAs at High Substrate Temperatures

  • W. T. Taferner (a1), K. Mahalingam (a1), D. L. Dorsey (a1) and K. G. Eyink (a1)

Abstract

A series of AlGaAs/GaAs depositions were monitored in-situ by spectroscopic ellipsometry and desorption mass spectroscopy, under various substrate temperatures (890 K - 990 K) where non-unity sticking conditions occur. An upper bound on the temperature where AlGaAs/GaAs heterostructures may be grown was determined. Ex-situ cross-sectional transmission electron microscopy verified that the AlGaAs/GaAs layer thicknesses grown by molecular beam epitaxy were accurately determined by spectroscopic ellipsometry at these elevated temperatures. The substrate temperature dependence on Ga desorption rates was consistent with Monte Carlo simulation where desorption from both physisorbed and chemisorbed states were included.

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1 Foxon, C. F., Heterojunctions and Semiconductor Superlattices, edited by Allen, G., Bastard, G., Boccara, N., Lannoo, M., and Voss, M. (Springer, Berlin, 1986), 27.
2 Taferner, W. T., Eyink, K. G., Brown, G. J., Szmulowicz, F., Hegde, S. M., Walck, S. D., Tomich, D. H., Seaford, M. L., and Lampert, W. V., submitted for publication in J. Electron. Mat. (1999).
3 Evans, K. R., Stutz, C. E., Lorance, D. K., and Jones, R. L., J. Vac. Sci. Technol. B 7 (1989) 259; and K. R. Evans, C. E. Stutz, E. N. Taylor, and J. E. Ehret, J. Vac. Sci. Technol. B 9 (1991) 2428.10.1116/1.584729
4 Fischer, R., Klem, J., Drummond, T. J., Thorne, R. E., Kopp, W., Morkoç, H., and Cho, A. Y., J. Appl. Phys. 54 (1983) 2508.10.1063/1.332317
5 Nouaoura, M., Lassabatere, L., Bertru, N., and Bonnet, J., J. Vac. Sci. Technol. B13 (1995) 83.10.1116/1.587990
6 Aspnes, D. E., Quinn, W. E., and Gregory, S., Appl. Phys. Lett. 56, 2569 (1990).10.1063/1.102868
7 Kuo, C. H., Anad, S., Droopad, R., Choi, K. Y., and Maracas, G. N., J. Vac. Sci. Technol. B 12 (1994) 1214.10.1116/1.587047
8 Kuo, C. H., Anad, S., Fathollahnejad, H., Ramamurti, R., Droopad, R., and Maracas, G. N., J. Vac. Sci. Technol. B13 (1995) 681.10.1116/1.587941
9 Mahalingam, K., Dorsey, D. L., Evans, K. R., and Venkat, R., Appl. Phys. Lett. 70 (1997) 3143; and J. Cryst. Growth 175/176 (1997) 211–215.10.1063/1.119115

Real-Time Monitoring by Spectroscopic Ellipsometry and Desorption Mass Spectroscopy During Molecular Beam Epitaxy of AlGaAs/GaAs at High Substrate Temperatures

  • W. T. Taferner (a1), K. Mahalingam (a1), D. L. Dorsey (a1) and K. G. Eyink (a1)

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