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Real-Time Femtosecond Ellipsometry of SixGe1−x Epilayers

Published online by Cambridge University Press:  25 February 2011

H. R. Choo ,
M. C. Downer  and
V. P. Kesan
H. R. Choo
Affiliation:
Department of Physics, University of Texas at Austin, Austin, TX 78712
M. C. Downer
Affiliation:
Department of Physics, University of Texas at Austin, Austin, TX 78712
V. P. Kesan
Affiliation:
IBM Thomas J.Watson Research Center, Yorktown Heights, NY 10598
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Abstract

We have developed a femtosecond ellipsometer by incorporating ellipsometric probe optics into a rapid scan femtosecond pump-and-probe experiment. The system allows near real-time display of the photo-induced reflectivity changes and provides complete characterization of the time-varying dielectric function. This ellipsometer is used ex situ to characterize the femtosecond response of relaxed, MBE-grown SixGe1−x alloys over the complete composition range. The results show. that the femtosecond response depends strongly on alloy composition in optically thick samples. Ge-like samples (x<0.37) show a characteristic two-component response which may be caused by intervalley L →Γ hole scattering and impact ionization. For a given alloy composition, the presence of interfacial strain or surface oxidation strongly alter the femtosecond response.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 263: Symposium F – Mechanisms of Heteroepitaxial Growth , 1992 , 317
Copyright
Copyright © Materials Research Society 1992

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References

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