The kinetics of deposition of CdTe, ZnS and ZnSe films was studied. An overall microkinetically reversible kinetic scheme consisting of elementary reactions, comprehensive of gas phase and surface processes was developed. Kinetic constants of gas phase reactions were either found in the literature or determined through quantum chemistry methods. Kinetic constants of surface reactions were first guessed combining kinetic theory with quantum chemical calculations and then their values were refined to reproduce experimental data. The kinetics schemes so developed were tested through the simulation of deposition reactors. Measured growth rates and gas phase compositions were thus compared with those calculated. The major finding of this studies is that the growth of CdTe, ZnS and ZnSe can be represented adopting a surface kinetic scheme constituted essentially by the same fundamental steps.