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Real Time Ellipsometry Study of the Interfaces Formation of Microcrystalline Silicon

Published online by Cambridge University Press:  21 February 2011

M. Fang  and
B. Drevillon
M. Fang
Affiliation:
Also at LPMC, Ecole Polytechnique, 91128 Palaiseau, France.
B. Drevillon
Affiliation:
LPICM (UPR 258 du CNRS), Ecole Polytechnique, 91128 Palaiseau, France.
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Abstract

A detailed study by real time spectroellipsometry of the early stage of the growth of microcrystalline silicon (μc-Si) on various substrates is presented. In practical applications μc-Si films are generally deposited on hydrogenated amorphous silicon (a-Si:H) or on transparent conducting oxides (TCO). In the case of a-Si:H, the beginning of the deposition is described by an uniform growth of a 60 Å thick porous μc-Si. However a nucleation-coalescence mechanism is observed during the growth of the first 60–70 Å thick μc-Si on smooth crystalline silicon (c-Si) substrate. In contrast a strong chemical reduction of the TCO substrates is observed during the first 10–20s of the exposure to the hydrogen diluted plasma. Then the ellipsometric measurements reveal an induction period of 30–60 s for the nucleation of microcrystallites. The influence of the preparation conditions of μc-Si on the TCO / μc-Si interfaces formation is emphasized.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 237: Symposium Ca – Interface Dynamics and Growth , 1991 , 625
Copyright
Copyright © Materials Research Society 1992

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References

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