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Reactivity and Migration of Hydrogen in A-SI:H

Published online by Cambridge University Press:  15 February 2011

R. Biswas ,
Qiming Li ,
B. C. Pan  and
Y. Yoon
R. Biswas
Affiliation:
Department of Physics, Microelectronics Research Center and Ames Laboratory Iowa State University, Ames, IA 50011
Qiming Li
Affiliation:
Department of Physics, Microelectronics Research Center and Ames Laboratory Iowa State University, Ames, IA 50011
B. C. Pan
Affiliation:
Department of Physics, Microelectronics Research Center and Ames Laboratory Iowa State University, Ames, IA 50011
Y. Yoon
Affiliation:
Department of Physics, Microelectronics Research Center and Ames Laboratory Iowa State University, Ames, IA 50011
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Abstract

Tight-binding molecular dynamics calculations reveal a new mechanism for hydrogen diffusion in hydrogenated amorphous silicon. Hydrogen diffuses through the network by successively bonding with nearby silicon and breaking their Si-Si bonds. The diffusing hydrogen carries with it a newly created dangling bond. These intermediate transporting states are densely populated in the network and have lower energies than H at the center of stretched Si-Si bonds.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 467: Symposium A – Amorphous and Microcrystalline Silicon Technology - 1997 , 1997 , 135
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

1. Van Wieringen, A. and Warmholtz, N., Physica 22, 849 (1956).Google Scholar
2. “Hydrogen in Semiconductors” Semiconductors and Semimetals Volume 34, ed. Pankove, J. I. and Johnson, N.M. (Academic, New York 1991).Google Scholar
3. Kakalios, J. in Ref 2., page 381.Google Scholar
4. VandeWalle, J., Phys. Rev. B 49, 4579 (1994).Google Scholar
5. VandeWalle, C., and Street, R. A., Phys. Rev. B 51, 10615 (1995).Google Scholar
6. Li, Qiming and Biswas, R., Appl. Phys. Lett. 68, 2261 (1996).Google Scholar
7. Li, Qiming and Biswas, R. Phys. Rev B 52, 10705 (1995).Google Scholar
8. Manan, A.H., Johnson, E. I., Crandall, R. S., and Branz, H. M., MRS 377, 413 (1995).Google Scholar
9. Street, R. A., “Hydrogenated Amorphous Silicon” (Cambridge University Press, Cambridge, 1991).Google Scholar
10. Li, Qiming and Biswas, R., Phys. Rev. B. 50, 18090 (1994).Google Scholar
11. Beyer, W. and Jastrow, U., MRS Symp. Proc. 420, 497 (1996).Google Scholar
12. Nickel, N. H., Jackson, W. B., and Walker, J., Phys. Rev. B 53, 7750 (1996).Google Scholar