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Reactive Ion Etching of GaN Thin Films

Published online by Cambridge University Press:  22 February 2011

Michael Manfra ,
Stuart Berkowitz ,
Richard Molnar ,
Anna Clark ,
T.D. Moustakas  and
W.J. Skocpol
Michael Manfra
Affiliation:
Department of Physics, Boston University, Boston Ma 02215
Stuart Berkowitz
Affiliation:
Department of Physics, Boston University, Boston Ma 02215
Richard Molnar
Affiliation:
Department of Engineering, Boston University, Boston Ma 02215
Anna Clark
Affiliation:
Department of Physics, Boston University, Boston Ma 02215
T.D. Moustakas
Affiliation:
Department of Engineering, Boston University, Boston Ma 02215
W.J. Skocpol
Affiliation:
Department of Physics, Boston University, Boston Ma 02215
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Abstract

Reactive ion etching of GaN grown by electron-cyclotron-resonance, microwave plasma-assisted molecular beam epitaxy on (0001) sapphire substrates was investigated. A variety of reactive and inert gases such as CC12F2, SF6, CF4, H2/CH4 mixtures, CF3Br, CF3Br/Argon mixtures and Ar were investigated. From these studies we conclude that of the halogen radicals investigated, Cl and Br etch GaN more effectively than F. The etching rate was found to increase with decreasing pressure at a constant cathode voltage, a result attributed to larger mean free path of the reactive species.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 324: Symposium K – Diagnostic Techniques for Semiconductor Materials Processing , 1993 , 477
Copyright
Copyright © Materials Research Society 1994

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