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Reactive Atom-Surface Scattering the Adsorption and Reaction of Atomic Oxygen on the Si(100) Surface

Published online by Cambridge University Press:  25 February 2011

J. R. Engstrom ,
M. M. Nelson  and
T. Engel
J. R. Engstrom
Affiliation:
Department of Chemistry, University of Washington, Seattle, WA 98195
M. M. Nelson
Affiliation:
Department of Chemistry, University of Washington, Seattle, WA 98195
T. Engel
Affiliation:
Department of Chemistry, University of Washington, Seattle, WA 98195
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Abstract

The adsorption and reaction of atomic oxygen on the Si(100) surface has been examined by employing supersonic beam techniques, X-ray photoelectron spectroscopy and mass spectrometry. Atomic oxygen adsorbs with a unit probability of adsorption on the clean Si(100) surface. The probability of adsorption decreases monotonically with increasing coverage. At surface temperatures above approximately 1000 K. the adsorption of atomic oxygen results in the gasification of the substrate, producing SiO(g). In comparison to molecular oxygen for this reaction, where two surface intermediates were implicated, only one surface intermediate is formed from the reaction of atomic oxygen with the Si surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 131: Symposium E – Chemical Perspectives of Microelectronic Materials I , 1988 , 245
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

1. Engstrom, J.R., Nelson, M.M., and Engel, T., to be published.Google Scholar
2. D'Evelyn, M.P., Nelson, M.M., and Engel, T., Surface Sci. 186, 75 (1987).Google Scholar
3. Sibener, S.J., Buss, R.J., Ng, C.Y. and Lee, Y.T., Rev. Sci. Instrum. 51, 167 (1980).Google Scholar
4. Seah, M.P. and Dench, W.A., Surface Interface Anal. 1, 2 (1979).Google Scholar
5. Walkup, R.E. and Raider, S.I., Appl. Phys. Lett. 53, 888 (1988).Google Scholar
6. Yu, M.L. and Eldridge, B.N.. Phys. Rev. Lett. 58. 1691 (1987).Google Scholar
7. Schell-Sorokin, A.J. and Demuth, J.E., Surface Sci. 157, 273 (1985).Google Scholar
8. Hollinger, G., Morar, J.F., Himpsel, F.J., Hughes, G. and Jordan, J.L., Surface Sci. 168, 609 (1986).Google Scholar
9. Incoccia, L., Balerna, A., Cramm, S., Kunz, C., Senf, F. and Storjohann, I., Surface Sci. 189/190, 453 (1987).Google Scholar