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Reactions at the Titanium-Silicon Interface Studied Using Hot-Stage Tem

  • Amol Kirtikar (a1) and Robert Sinclair (a1)

Abstract

The interaction of titanium thin films sputter-deposited onto single crystal silicon was studied by in situ heating experiments within the TEM. Reactions at the Ti-Si interface including amorphization, crystallization, allotropie phase transformations and agglomeration have been observed in real time and recorded on videotape. Interpretation of these recordings can yield a wealth of information on the silicidation process.

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1. Sinclair, R., Parker, M. A. and Kim, K. B., Ultramicroscopy 23 383 (1987).
2. Sinclair, R., Yamashita, T., Parker, M. A., Kim, K. B., Holloway, K. and Schwartzman, A. F., Acta Crystall. A44, 965 (1988).
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4. Konno, T. J. and Sinclair, R., submitted for publication.
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7. Beyers, R., Ph.D thesis, Stanford University, 1989.
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9. Kirtikar, A. S., Sinclair, R., Tracy, B., Dass, M. L. A. and Cadien, K., submitted to J. Appl. Phys.
10. Murarka, S. P. and Fraser, D. B., J. Appl. Phys. 57, 342 (1980).
11. Holloway, K. and Sinclair, R., J. Less-common metals 140 139 (1988).
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13. Raaijmakers, I. J. M. M., Reader, A. H. and Oosting, P. H., J. Appl. Phys. 63 2790 (1988).
14. Raaijmakers, I. J. M. M. and Kim, K. B., J. Appl. Phys 61 6255 (1990).
15. Nolan, T., Sinclair, R. and Beyers, R., J. Appl. Phys. 21 720 (1992).

Reactions at the Titanium-Silicon Interface Studied Using Hot-Stage Tem

  • Amol Kirtikar (a1) and Robert Sinclair (a1)

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