- Cited by 17
Nathan, A. Murthy, R.V.R. Ma, Q. Park, B. Pham, H. and Sazonov, A. 1999. Amorphous silicon detector and thin film transistor technology for large area imaging of X-rays. Vol. 1, Issue. , p. 77.
Ma, Eugene Y. and Wagner, Sigurd 1999. Amorphous silicon transistors on ultrathin steel foil substrates. Applied Physics Letters, Vol. 74, Issue. 18, p. 2661.
Sazonov, A. and Nathan, A. 2000. 120 °C fabrication technology for a-Si:H thin film transistors on flexible polyimide substrates. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 18, Issue. 2, p. 780.
Sazonov, Andrei Nathan, Arokia and Striakhilev, Denis 2000. Materials optimization for thin film transistors fabricated at low temperature on plastic substrate. Journal of Non-Crystalline Solids, Vol. 266-269, Issue. , p. 1329.
Nathan, A Park, B Sazonov, A Tao, S Chan, I Servati, P Karim, K Charania, T Striakhilev, D Ma, Q and Murthy, R.V.R 2000. Amorphous silicon detector and thin film transistor technology for large-area imaging of X-rays. Microelectronics Journal, Vol. 31, Issue. 11-12, p. 883.
Erickson, Karl and Dalal, Vikram L 2000. Growth of microcrystalline Si and (Si, Ge) on plastic substrates. Journal of Non-Crystalline Solids, Vol. 266-269, Issue. , p. 685.
Xu, K. Shah, S. I. and Guerin, D. 2001. Low temperature deposition and characterization of polycrystalline Si films on polymer substrates. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 19, Issue. 4, p. 1078.
Águas, Hugo Martins, R and Fortunato, E 2001. Role of ion bombardment on the properties of a-Si:H films. Vacuum, Vol. 60, Issue. 1-2, p. 247.
Águas, Hugo Fortunato, Elvira and Martins, Rodrigo 2002. Influence of a DC grid on silane r.f. plasma properties. Vacuum, Vol. 64, Issue. 3-4, p. 387.
Nathan, Arokia Park, Byung-kyu Ma, Qinghua Sazonov, Andrei and Rowlands, John A. 2002. Amorphous silicon technology for large area digital X-ray and optical imaging. Microelectronics Reliability, Vol. 42, Issue. 4-5, p. 735.
Carcia, P. F. McLean, R. S. Reilly, M. H. and Nunes, G. 2003. Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering. Applied Physics Letters, Vol. 82, Issue. 7, p. 1117.
Chabinyc, M.L. Wong, W.S. Arias, A.C. Ready, S. Lujan, R.A. Daniel, J.H. Krusor, B. Apte, R.B. Salleo, A. and Street, R.A. 2005. Printing Methods and Materials for Large-Area Electronic Devices. Proceedings of the IEEE, Vol. 93, Issue. 8, p. 1491.
Cross, R.B.M. and De Souza, M. M. 2006. The Impact of Fermi Pinning on Thermal Properties of the Instabilities in ZnO TFTs. MRS Proceedings, Vol. 957, Issue. ,
Nathan, Arokia and Karim, Karim S. 2006. MEMS: A Practical Guide to Design, Analysis, and Applications. p. 281.
Nathan, Arokia and Karim, Karim S. 2006. MEMS. p. 281.
Sazonov, Andrei Striakhilev, Denis and Nathan, Arokia 2009. Flexible Electronics. Vol. 11, Issue. , p. 53.
Alpuim, P. Gaspar, J. Gieschke, P. Ehling, C. Kistner, J. Gonçalves, N. J. Vasilevskiy, M. I. and Paul, O. 2011. Study of the piezoresistivity of doped nanocrystalline silicon thin films. Journal of Applied Physics, Vol. 109, Issue. 12, p. 123717.
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This article presents mechanisms for low temperature (<150°C) rf plasma enhanced chemical vapor deposition of silicon and silicon nitride thin films that lead to sufficient electronic quality for thin film transistor (TFT) fabrication and operation. For silicon deposition, hydrogen abstraction and etching, and silicon disproportionation reactions are identified that can lead to optimized hydrogen concentration and bonding environments at <150°C. Nitrogen dilution of SiH4/NH3 mixtures during silicon nitride deposition at low temperatures helps promote N-H bonding, leading to reduced charge trapping. Good quality amorphous silicon TFT's fabricated with a maximum processing temperature of 110°C are demonstrated on flexible transparent plastic substrates. Transistors formed with the same process on glass and plastic show linear mobilities of 0.33 and 0.12 cm2/Vs, respectively, with ION/IOFF ratios > 106.
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