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Rashba Spin-Splitting and Spin Currents in GaN Heterojunctions

Abstract

Gallium nitride is a potentially interesting material system for Spintronics since it is expected to become ferromagnetic with a Curie-temperature above room temperature if doped with manganese and long spin relaxation times are detected in this material.

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[1] Beschoten, B. et al. Phys. Rev. B 63, 121202 (2001).
[2] Dietl, T. et al. Science 287, 1019 (2000).
[3] Weber, W. et al. Appl. Phys. Lett. 87, 262106 (2005)
[4] Schmult, S. et al. Phys. Rev. B 74, 033302 (2006)
[5] Thillosen, N. et al. Appl. Phys. Lett. 88, 022111 (2006)
[6] Ganichev, S.D., Prettl, W., Intense Terahertz Excitation of Semiconductors (Oxford University Press, 2006)
[7] Bel'kov, V.V. et al. J. Phys. C: Condens. Matter. 17, 3405 (2005).
[8] Ganichev, S.D. et al. Nature Physics (London) 2, 609 (2006).
[9] Ganichev, S.D. et al. Phys. Rev. B, to be published (cond-mat/0610736).
[10] Ivchenko, E.L., Optical Spectroscopy of Semiconductor Nanostructures (Alpha Science Int., Harrow, 2005).
[11] Ganichev, S.D. et al. Nature (London) 417, 153 (2002).
[12] Tarasenko, S.A., private communication

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Rashba Spin-Splitting and Spin Currents in GaN Heterojunctions

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