Skip to main content Accessibility help

Rapid Thermal Processing (RTP) of Shallow Silicon Junctions

  • T.E. Seidel (a1)


Rapid Thermal Processing (RTP) is used to study shallow junction formation for high dose implanted silicon. The residual damage from As damage is efficiently removed using high temperature-short time anneals (1100°C - few seconds), while limited arsenic atom diffusion is obtained. The diffusion properties are also characterized by concentration enhanced diffusion at higher doping. The higher doping is metastable, with reversible changes in resistivity observed for sequential 1100°C-800°C-1100°C-800°C thermal cycles. RTP gives shallower defect free As junctions than standard long time anneals. Boron junctions are limited by the depth extension of a large ion-channeling-tail which is shown to undergo local enhanced diffusion. The approaches to form shallow p+ junctions without channel tails are discussed. A summary of ion damage studies is made. Some generalizations for determining an RTP advantage or disadvantage are made, based on activation energy differences of effects.



Hide All
1. Benton, J.L., Celler, G.K., Jacobson, D.C., Kimmerling, L.C., Lischner, D.J., Miller, G.L. and Robinson, McD., in: Laser and Electron Beam Interactions with Solids, eds., Appleton, B.R. and Celler, G.K. (North-Holland, New York, 1982) p. 765
2. Sedgwick, T.O., J. Electrochem. Soc. 130 (1983) 484.
3. Wilson, S.R., Gregory, R.B., Paulson, W.M. and Hiehl, H.T., IEEE Trans. Nucl. Sci. NS–30 (1983) 1734
4. Seidel, T.E., Lischner, D.J., Pai, C.S., Knoell, R.B., Maher, D.M., D.C., Nucl. Inst. & Meth in physics research. B7/8, (1985) 251260 North Holland Amsterdam
5. Hill, C., in: Laser and Electron-Beam Solid Interactions and Material Processing, eds., Gibbons, J.F., Hess, L.D. and Sigmon, T.W. (North-Holland, New York, 1981) p. 361
6. Russo, C., 5th Int. Conf. Ion Impl. and Tech. Smugglers Notch, 1984, published in Nuc. Inst. and Meth.
7. Sheets, R. E., (private communication), Tamarack Scientific Co., Anaheim, Ca.
8. Shatas, S. (private communication), AG Associates, Palo Alto, CA.
9. Gelpey, J. (private Communication), Eaton, Beverly, MA.
10. Lischner, D.J. and Celler, G.K., in Laser and Electron-Beam Interactions with Solids, Appleton, and Celler, , Eds., North Holland, N.Y. p. 759 (1982)
11. Shatas, S. to be presented MRS - Fall '85
12. Sheets, R., to be presented MRS - Fall '85.
13. Seidel, T.E., Lischner, D.J., Pai, C.S. and Lau, S.S., VLSI Science and Technology/1984, vol. 84–7, eds., Bean, J.C. and Rozgonyi, G.A. (The Electrochem. Soc., 1984) p. 184
14. Wilson, S.R., Paulson, W.M., Gregory, R.B., Hamdi, A.H. and McDaniel, F.D., J. Appl. Phys. 55 (1984) 4162
15. Seidel, T.E., Pai, C.S., Lischner, D.J., Maher, D.M., Knoell, R.V., Williams, J.S. Penumalli, B.R. and Jacobson, D.C., Proc. MRS - Nov '84
16. Hofker, W.K., Phillips Res. Repts. Suppl. No. 8 (1975).
17. Cho, K., Allen, W.R., Finstad, T.G., Chu, W.K., Liu, J. and Wortman, J.J., these Proceedings (IBMM '84) Nucl. Instr. and Meth. B7/8 (1985) 265
18. Wilson, R.G., J. Appl. Phys. 54 (1983) 6879
19. Seidel, T.E., Ion Implantation in Semiconductors, eds., Ruge, I. and Graul, J. (Springer-Verlag, Berlin, 1971) p.47
20. Liu, T.M., Oldham, W.G., IEEE Electron Dev. Lett. EDL–4 (1983) 56
21. Davies, D. Eirug, to be published IEEE Electron Device Lett. (1985)
22. Shone, F-C, Saraswat, K. C. and Plummer, J. D., Stanford Electronics Lab. Rept ICL17-79, July 1984.
23. Seidel, T.E. Maher, D.M. and Knoell, R., Proc. J. Electronic Materials at 13th Int. Conf. on Defects in Semiconductors, Coronado (1984)
24. Narayan, J., J. Appi. Phys. 53 (1982) 8607
25. Sands, T., Washburn, J., Myers, E. and Sadana, D.K., These Proceedings (IBMM '84) Nucl. Instr. and Meth. B7/8 (1985) 337.
26. Poate, J.M. and Wiliams, J.S., in Ion Implantation and Beam Processing, pp. 1357 Academic Press, Australia, 1984
27. Sadana, D.K., Wortman, J.J., Chu, W.K. and Rozogonyi, G.A., Energy Beam-Solid Interactions and Transient Thermal Processing, eds., Fan, J.C.C. and Johnson, N.M. (North-Holland, New York, 1984) 943.
28. Seidel, T.E., Knoell, R.V., Stevie, F.A., Poli, G. and Schwartz, B., VLSI Science and Technology/1984 vol. 84–7, eds., Bean, K.E. and Rozgonyi, G.E. (the Electrochem. Soc. 1984) p. 201
29. Prussin, S., Margolese, D. I., Tauber, R.N. and Hewitt, W.B., in VLSI Science and Technology 1984, Eds. Bean, and Rozgonyi, , The Electrochem. Soc., Proc. vol. 84-7, p. 176, 1984.
30. North, J. C. and Gibson, W.M., First International Conference on Ion Implantation, Thousand Oaks, Gordon and Breach, NY, p. 343, 1971
31. Kamgar, Avid, Fichtner, W., Sheng, T.T., and Jacobson, D.C., Appl. Phys. Lett. 45 (7), 1, p. 754 (1984)
32. Olson, G.L., Kokorowski, S.A., Roth, J.A. and Hess, L.D., Mat. Res. Soc. Symp. Proc., 13, 141 (1983).
33. Fairfield, J.M. and Masters, B.J., J. Appl. Phys. 38 (1967) 3148
34. Kalish, R., Sedgwick, T.O., Madir, S. and Shatas, S., Appl. Phys. Lett. 44 (1984) 107.
35. Fair, R.B., Wortman, J.J. and Liu, J., IEDM Tech. Digest 1983, paper 29.2 and oral presentation.
36. Narayan, J., Holland, O.W., Eby, R.E., Wortman, J.J., Ozguy, V. and Rozgonyi, G.A., Appl. Phys. Lett. 43 (1983)
37. Sedgwick, T.O., Cohen, S.A., Oehrlein, G.S., Deline, V.R., Kalish, R. and Shatas, S., Oral presentation at ECS meeting, Cincinnati 1984 and VLSI Science ant Technology/1984, vol. 84-7, eds., Bean, J.C. and Rozgonyi, G.A. (The Electrochem. Soc., 1984) p. 192
38. Fair, R.B., Impurity Doping Processes in Silicon, ed., Wang, F.F.Y. (North-Holland, New York) Ch. 7.
39. Ghez, R., Oehrlein, G.S., Sedgwick, T.O., Morehead, F.F. and Lee, Y.H., Appl. Phys. Lett. (November 1984)
40. Seidel, T.E. and Rae, A.U. Mac, Trans, Met. Soc. AIME, 245, p. 491 (1969)
41. Wu, N.R., Sadana, D.K. and Washburn, J., Appl. Phys. Lett. 44 (1984) 782
42. Fair, R.B. and Weber, G.R., J. Appl. Phys. 44 (1973) 273
43. Seidel, T.E., IEEE Electr. Dev. Lett. EDL–4 (1983) 353.
44. Hodgson, R.T., Deline, V., Mader, S.M., Morehead, F.F. and Gelpey, J., in: Energy Beam-Solid Interactions and Transient Thermal Processing, eds., Fan, J.C.C. and Johnson, N.M. (North-Holland, New York, 1984)
45. Sadana, D.K., Shatas, S.C. and Gat, A., Inst. Phys. Conf. Ser. No. 67 (Institute of Physics, Bristol, 1983) p. 143
46. Fair, R.B., Wortman, J.J. and Liu, J., to be published in J. Electrochem. Soc.
47. Hopkins, L., Seidel, T.E. and Williams, J.S. (to be published)
48. Morehead, F., Hodgson, R.J., and Sedgwick, T.O., proc. Fall MRS 1984
49. Watkins, G.D., in: Defects in Semiconductors, eds., Narayan, J. and Tan, T.Y. (North-Holland, New York, 1981) p. 24
50. Oehrlein, G.S., Ghez, R., Fehriback, J.D., Gorey, E.F., Sedgwick, T.O., Cohen, S.A. and Deline, V.R., J. Electronic Materials, Proc. 13th Int. Conf. On Defects in Semiconductors, Coronado (1984) to be published December 1984.
51. Shatas, S., Gat, A. and Ramani, R., private communication; Proc. Workshop on Refractory Metal Silicides for VLSI-II, May 14-17, UC, Berkeley (1984).
52. Seidel, T.E. (unpublished)
53. Sands, T., Washburn, J., Gronsky, R., Maszara, W., Sadana, D.K. and Rozgonyi, G.A., J. Electronic Materials, Proc. 13th Int. Cofn. on Defects in Semiconductors, held in Coronado (1984) to be published December 1984.
54. Maher, D.M., to be published MRS - Fall, 1985
55. Nulman, J., Krusius, J.P. and Rathbun, L., IEDM 1984, IEEE Electron Device Meeting
56. Sedgwick, T.O., d'Heurle, F.M., and Cohen, S.A., The Electrochemical Society Vol. 131, No. 10, October 1984
57. Lischner, D.J., Kelly, M. and Seidel, T.E. (unpublished)

Rapid Thermal Processing (RTP) of Shallow Silicon Junctions

  • T.E. Seidel (a1)


Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed