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Rapid Thermal Processing of Multiple Low Dose Oxygen Implantations for SIMOX

Published online by Cambridge University Press:  28 February 2011

J. Blake ,
J. C. Gelpey ,
D. M. Lee ,
L. Rowland  and
G. A. Rozgony
J. Blake
Affiliation:
Eaton Corporation, Danvers, MA 01923
J. C. Gelpey
Affiliation:
Eaton Corporation, Danvers, MA 01923 Currently with Peak Systems
D. M. Lee
Affiliation:
Department of Materials Science and Engineering North Carolina State University, Raleigh, NC 27695–7916
L. Rowland
Affiliation:
Department of Materials Science and Engineering North Carolina State University, Raleigh, NC 27695–7916
G. A. Rozgony
Affiliation:
Department of Materials Science and Engineering North Carolina State University, Raleigh, NC 27695–7916
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Abstract

A cross-sectional transmission electron microscopy study has been performed on SIMOX wafers prepared using three sequential low dose (6 x 1017 cm2) oxygen implantations. After each implant the wafers were annealed using rapid thermal processing at temperatures up to 1360°C for times of 1 to 5 minutes. The TEM results show that, although low dislocation densities are obtained, oxygen precipitate dissolution is incomplete for these conditions. Therefore, longer annealing times will be required. In addition, lower increments of oxygen dose are recommended to approach dislocation-free superficial silicon layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 107: Symposium H – Silicon-on-Insulator and Buried Metals in Semiconductors , 1987 , 61
Copyright
Copyright © Materials Research Society 1988

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